Integration of waveguide-type wavelength demultiplexing photodetectors by the selective intermixing of an InGaAs-InGaAsP quantum-well structure

Yeo, Deok Ho; Yoon, Kyungho; Kim, Hang Ro; Kim, Sung June

doi:10.1109/3.922781

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Integrated MQW intermixed InGaAsP/InP waveguide photodiodes

Bhowmick

Das

2010

Opt Quant Electron

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A multi-wavelength Quantum well (QW) waveguide photodiode (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial tailoring of the bandgap with post growth F implanted QW intermixing of InGaAsP/InP multi QWs for the integration have been considered. Two separate structures with different composition but same well widths are necessary to detect all CWDM wavelengths. For In 0.5995 Ga 0.4005 As 0.8521 P 0.1479 well there is a 12 channel coverage from 1,270 to 1,490 nm and for the In 0.5540 Ga 0.4460 As 0.9489 P 0.0511 well the 14 channel spans from 1,350 to 1,610 nm. A carrier tunneling time of 20 ps along with the transit time limited bandwidth of 86 GHz gives a 3 dB bandwidth of 41 GHz by optimizing the i-MQW thickness and dopant concentration of the different layers of the waveguide. A maximum efficiency of 22% with insertion loss of 0.4-23 dB has been obtained.

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