Intelligent Power IC with Partial SOI Structure

Yamaguchi, Hitoshi; Himi, Hiroaki; Fujino, Seiji; Hattori, Tadashi

doi:10.7567/ssdm.1994.pa-1-5

Cited by 2 publications

(3 citation statements)

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“…Thick SOI technology using a bonded SOI wafer and trench isolation has been proposed in early 1990's [13], and some power and/or high-voltage ICs using this technology have been developed [1][2][3][4][5][6][7][8]. Figure 5 illustrates schematic cross section of our PDP scan driver IC products on thick SOI.…”

Section: Thick Soi Technologymentioning

confidence: 99%

“…Thick SOI technology has become an important isolation technology in power and/or high-voltage ICs, for example automotive power ICs [1,2] and PDP driver ICs [3][4][5][6][7][8]. This is because 1) high-voltage and high-current devices can be integrated and 2) almost no parasitic devices and very small isolation area can be realized by combining with trench technique.…”

Section: Introductionmentioning

confidence: 99%

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Plasma-Display-Panel Drivers as a Volume Application of Thick SOI Technology

Fujihira¹,

Sumida²,

Kumada³

2008

ECS Trans.

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Thick SOI technology has achieved commercial success in plasmadisplay-panel (PDP) driver ICs. The present paper will give a review on the technology trend of PDP driver ICs and an outlook of the application status of thick SOI technology to PDP driver ICs. Thick SOI technology brings such merits as high device packing density, complete isolation and the integration of high-voltage and high-current devices to power and/or high-voltage ICs. PDP driver ICs need thick SOI, because it is possible to achieve the highest IC performances including cost by utilizing these merits.

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Section: Thick Soi Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Plasma-Display-Panel Drivers as a Volume Application of Thick SOI Technology

Fujihira¹,

Sumida²,

Kumada³

2008

ECS Trans.

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show abstract

“…The intelligent power IC that contains the logic circuits and the power elements on the same chip has the growing demand in the automotive application. The ideal substrate structure for the intelligent power IC is the partial SOI structure (3,4) shown in figure 1, because it can integrate the control circuits in the dielectrically isolated SOI region and the low on-state resistance vertical power element for more current capability in the non-SOI region (5). As a fabrication method, we have previously proposed the direct bonding combined with the technology of filling oxide in the cavity by oxidation (1).…”

Section: Partial Soi Structurementioning

confidence: 99%

Partial SOI Structure by Wafer Direct Bonding through Amorphous Layer

Himi

Fujino

2008

ECS Trans.

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A partial SOI structure suitable for power IC is taken up and as the fabrication method the wafer direct bonding using the intermediate poly-crystalline silicon layer is proposed. Through the amorphous layer formed on the bonding surface of the deposited and planarized poly-crystalline silicon by silicon ion implantation, the void-less interface has been achieved and an ideal partial SOI structure have become possible.

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Intelligent Power IC with Partial SOI Structure

Cited by 2 publications

References 0 publications

Plasma-Display-Panel Drivers as a Volume Application of Thick SOI Technology

Plasma-Display-Panel Drivers as a Volume Application of Thick SOI Technology

Partial SOI Structure by Wafer Direct Bonding through Amorphous Layer

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