2004 IEEE Workshop on Microelectronics and Electron Devices
DOI: 10.1109/wmed.2004.1297359
|View full text |Cite
|
Sign up to set email alerts
|

Interaction effects of slurry chemistry on chemical mechanical planarization of electroplated copper

Abstract: Recent studies have been conducted investigating the effects of slurry chemistry on the copper CMP process. Slurry pH and hydrogen peroxide concentration are two important variables that must be carefully formulated in order to achieve desired removal rates and uniformity. In applications such as throughwafer vertical interconnects, slurry chemistry effects must be thoroughly understood when copper plating thicknesses can measure up to 20 microns thick. The species of copper present on the surface of the wafer… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 6 publications
0
2
0
Order By: Relevance
“…Step 5-Polish Copper: The surface copper is removed using chemical mechanical planarization (CMP). A two-step process is used in order to remove the thick layer of copper and planarize the surface [23]. The TiN is also removed by CMP.…”
Section: Fabrication Process Stepsmentioning
confidence: 99%
“…Step 5-Polish Copper: The surface copper is removed using chemical mechanical planarization (CMP). A two-step process is used in order to remove the thick layer of copper and planarize the surface [23]. The TiN is also removed by CMP.…”
Section: Fabrication Process Stepsmentioning
confidence: 99%
“…In this study, we used ICue5003 for the CMP of copper, which was mixed with 1mol/l nitric acid to adjust to pH=4, and NANOX#200 for the MP of copper. Table 2 shows the polishing conditions [10].…”
Section: Polishingmentioning
confidence: 99%