Time-multiplexed etching, the Bosch process, is a technique consisting of alternating etch and deposition cycles to produce high aspect-ratio etched features. The Bosch process uses SF 6 and C 4 F 8 as etch and polymer deposition gases, respectively. In these experiments, polymer thickness is controlled by both C 4 F 8 gas flow rates and by deposition cycle time. The authors show that polymer thickness can be used to control wall angle and curvature at the base of feature walls. Wall angle is found to be independent of trench width under thin-polymer deposition conditions. Experimental results are compared to results obtained by other researchers using the more conventional simultaneous etch/deposition technique.

Abstract-Through wafer interconnects (TWIs) enable vertical stacking of integrated circuit chips in a single package. A complete process to fabricate TWIs has been developed and demonstrated using blank test wafers. The next step in integrating this technology into 3-D microelectronic packaging is the demonstration of TWIs on wafers with preexisting microcircuitry. The circuitry must be electrically accessible from the backside of the wafer utilizing the TWIs; the electrical performance of the circuitry must be unchanged as a result of the TWI processing; and the processing must be as cost effective as possible. With these three goals in mind, several options for creating TWIs were considered. This paper explores the various processing options and describes in detail, the final process flow that was selected for testing, the accompanying masks that were designed, the actual processing of the wafers, and the electrical test results.

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