2002
DOI: 10.1116/1.1515910
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Polymer thickness effects on Bosch etch profiles

Abstract: Time-multiplexed etching, the Bosch process, is a technique consisting of alternating etch and deposition cycles to produce high aspect-ratio etched features. The Bosch process uses SF 6 and C 4 F 8 as etch and polymer deposition gases, respectively. In these experiments, polymer thickness is controlled by both C 4 F 8 gas flow rates and by deposition cycle time. The authors show that polymer thickness can be used to control wall angle and curvature at the base of feature walls. Wall angle is found to be indep… Show more

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Cited by 48 publications
(40 citation statements)
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“…The other was to use an etch-stop layer to improve the adhesive force of replicated structures. Because the gas chopping process makes the bottom etch profile round shaped (24,29) (Fig. 1D), the contact fraction of nanohairs replicated from the master was reduced at the time of contact (13).…”
Section: Resultsmentioning
confidence: 99%
“…The other was to use an etch-stop layer to improve the adhesive force of replicated structures. Because the gas chopping process makes the bottom etch profile round shaped (24,29) (Fig. 1D), the contact fraction of nanohairs replicated from the master was reduced at the time of contact (13).…”
Section: Resultsmentioning
confidence: 99%
“…Although not pursued in the current study, profile control with further precision may be possible by fine tuning the etch parameters and consulting the relevant literature. [54][55][56][57][58][59] Figures 4(a) and 4(b) show etched large square fields (p ¼ 5 lm, s ¼ 7 lm) before and after removal of the sacrificial structures, respectively. The sacrificial structures partially collapsed during the wafer cleaning and SiO 2 etching after DRIE, but were completely removed from the wafer surface and structures.…”
Section: Resultsmentioning
confidence: 99%
“…Step 2-Etch Via Through Wafer: An inductively-coupled plasma etcher utilizing the Bosch process [22] is used to etch an anisotropic hole through the entire thickness of the silicon wafer. The Bosch process consists of a short etch step, utilizing , followed by a sidewall passivation step utilizing .…”
Section: Fabrication Process Stepsmentioning
confidence: 99%