“…Compared to previously examined approaches to air‐stable precursors to molecular n‐dopants, our approach has the advantages that chemical side reactions are likely to be minimized and that the dopants are highly reducing, n‐doping ETMs with relatively low EAs, such as IIa and IIb . Moreover, a number of different dimers of this type are known,8–10, 14, 20–22 and additional examples can potentially be developed, allowing properties such as solubility, volatility, and monomer and dimer redox potentials to be varied. Although the focus of this paper is primarily on dimers incorporating the costly elements ruthenium and rhodium, it should be remembered that dopants are often used at low levels and only in a small portion of a device.…”