Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition

Yan, Fu; Naoi, Yoshiki; Tsukihara, Masashi; Yadani, Takayuki; Sakai, Shiro

doi:10.1016/j.jcrysgro.2005.04.083

Cited by 4 publications

(5 citation statements)

References 30 publications

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“…Therefore, this conclusion supports the hypothesis of our previous work [5]. As found in the literature some previous reports [8][9][10][11][12] show how the N incorporation into InGaAsN QWs is affected by the Ga/In composition. Some of these studies proposed several reasons to explain this event, such as the stable bonding of Ga-N as favourable for N incorporation [8,9] and the In segregation as unfavourable [10,11], while other studies suggested the presence of In as favourable for N incorporation [12].…”

Section: Contributed Articlesupporting

confidence: 92%

“…As found in the literature some previous reports [8][9][10][11][12] show how the N incorporation into InGaAsN QWs is affected by the Ga/In composition. Some of these studies proposed several reasons to explain this event, such as the stable bonding of Ga-N as favourable for N incorporation [8,9] and the In segregation as unfavourable [10,11], while other studies suggested the presence of In as favourable for N incorporation [12]. In consequence, some controversial observations have been reported in the literature about the effect of Ga/In content on the N incorporation into InGaAsN QWs.…”

Section: Contributed Articlementioning

confidence: 74%

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Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Gargallo-Caballero

Guzmán

Hopkinson

et al. 2009

Phys. Status Solidi (c)

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In this letter we demonstrate that the N incorporation into (Ga)InAsN quantum dots (QDs), grown on GaAs (100) by radio‐frequency (RF) plasma assisted molecular beam epitaxy (MBE), is enhanced as the Ga content increases up to 30% and decreases for Ga contents higher than 30%. Thus, this effect exhibits a maximum N incorporation with a Ga content of 30%. Two sets of (Ga)InAsN QDs samples have been grown under the same growth conditions but with different N contents in one of them and with different Ga concentration in the other set. Optical analysis using Photoluminescence (PL) measurements of the as‐grown and post growth rapid thermal annealed samples have been performed. The experimental results show a clear increase of the blueshift with the N concentration as occurred in dilute nitride quantum well (QW) structures. PL peak emission wavelength as high as 1.55 μm has been obtained from QDs capped with GaAs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlesupporting

confidence: 92%

Section: Contributed Articlementioning

confidence: 74%

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Gargallo-Caballero

Guzmán

Hopkinson

et al. 2009

Phys. Status Solidi (c)

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“…As observed when the Ga content increases up to 30%, the increase of the redshift is maximum, suggesting an enhanced N incorporation in this case. Similar observations were found in (In,Ga)(As,N) QWs, i.e., a reduction of the N incorporation with an increased In content and are attributed to either the higher Ga-N bonding energy (2.24 eV) compared to the In-N bonding energy (1.93 eV), [28][29][30][31] or to the suppression of the N incorporation due to the In surface segregation. 32 In addition, we find that when the Ga content is higher than 30%, the N-induced redshift decreases (instead of increasing), what would mean a reduced N incorporation into these nanostructures with a Ga content higher than 30%.…”

Section: B Optical Analysissupporting

confidence: 76%

“…On one hand, the larger N incorporation into the (In,Ga)(As,N) QDs up to 30% Ga could be explained by the increasing stability of the Ga-N bonds as the Ga/In ratio increases. 28,29 However, we find that for Ga contents higher than 30%, the N incorporation is reduced. To explain this behaviour, other mechanisms need to be introduced such as surface strain, i.e., strain in the near-surface region.…”

Section: E Discussionmentioning

confidence: 67%

“…32 Contradictory observations have been reported in the literature concerning the effect of the Ga/In content on the N incorporation into (In,Ga)(As,N) QWs. [28][29][30]32,35 In particular, Ref. 32 suggests that In surface segregation during the growth is the primary phenomenon driving the N incorporation, and thus the enhanced N incorporation process is surface kineticoriented.…”

Section: E Discussionmentioning

confidence: 99%

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Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

Gargallo-Caballero

Guzmán

Ulloa

et al. 2012

Journal of Applied Physics

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In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation. V

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MOVPE growth of AIIIBV‐N semiconductor compounds for photovoltaic applications

Ściana

Radziewicz

Pucicki

et al. 2011

Cryst. Res. Technol.

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The present work presents the influence of the growth parameters on the structural and optical properties of undoped GaAsN epilayers and triple quantum wells 3×InGaAsN/GaAs obtained by atmospheric pressure metal organic vapour phase epitaxy APMOVPE. The structures were examined using high resolution X‐Ray diffraction HRXRD, contactless electroreflectance CER, photocurrent PC and Raman RS spectroscopies. The influence of the growth temperature and the gas phase composition on the material quality and alloy composition of the investigated structures as well as the growth and calibration characteristics are presented and discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition

Cited by 4 publications

References 30 publications

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

MOVPE growth of AIIIBV‐N semiconductor compounds for photovoltaic applications

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