Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

Yang, Kyounghoon; Wang, Shulong; Liu, Hongxia

doi:10.1016/j.apsusc.2021.152248

Cited by 5 publications

(4 citation statements)

References 48 publications

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“…5(g) compares the mobility of our device with n-type MoS 2 FETs reported previously. 28,33–56 It is worth noting that the local 1T structural phase transition is an effective approach for coordinately improving both the intrinsic transport and contact properties to achieve high-speed and low-power MoS 2 FETs.…”

Section: Resultsmentioning

confidence: 99%

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Cheng,

He,

Han

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Cheng,

He,

Han

et al. 2024

J. Mater. Chem. C

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“…In addition, the roughness was characterized by root-mean-square surface roughness of 1.14 nm for an area of 20 μm × 20 μm, as shown in figure S3. The Hf 0.95 Al 0.05 O gate dielectric with a flat surface can effectively reduce the leakage current and enhance the performance of phototransistors [26,27].…”

Section: Methodsmentioning

confidence: 99%

High-performance MoS₂ phototransistors with Hf_1–xAl_xO back-gate dielectric layer grown by plasma enhanced atomic layer deposition

Yu,

Li,

et al. 2024

Nanotechnology

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Molybdenum sulfide (MoS2) as an emerging optoelectronic material, shows great potential for phototransistor owing to its atomic thickness, adjustable band gap, and low cost. However, the phototransistors based on MoS2 have been shown to have some issues such as large gate leakage current, interfacial scattering, resulting in suboptimal optoelectronic performance. Thus, Al-doped hafnium oxide (Hf1-xAlxO) is proposed to be a dielectric layer of the MoS2-based phototransistor solve this problem because of the relatively higher crystallization temperature and dielectric constant. Here, a high-performance MoS2 phototransistor with Hf1-xAlxO gate dielectric layer grown by plasma-enhanced atomic layer deposition has been fabricated and studied. The results show that the phototransistor exhibits a high responsivity of 2.2 × 104 A/W, a large detectivity of 1.7 × 1017 Jones, a great photo-to-dark current ratio of 2.2 × 106%, and a high external quantum efficiency of 4.4 × 106%. The energy band alignment and operating mechanism were further used to clarify the reason of the enhanced MoS2 phototransistor. The suggested MoS2 phototransistors could provide promising strategies in further optoelectronic applications.

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“…For material optimization, the purpose of optimizing the characteristics of the field effect tube is generally reached by improving the material processing process or proposing novel materials. For example, in 2022, a method to improve the contact condition at the interface of molybdenum disulfide by oxygen plasma treatment was proposed, in which the state of molybdenum dioxide was altered by the oxygen plasma treatment process, and the generated layer of molybdenum trioxide was utilized to protect the molybdenum dioxide while removing the organic impurities at the interface, thereby improving the device performance [8].…”

Section: Optimization Of Field Effect Tubesmentioning

confidence: 99%

Current Status, Development, And Application of Optimization Methods for Analog Circuits

Liu

2024

HSET

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The optimization of analog circuits has always relied on the experience and intuition of engineers to find suitable parameters to meet the requirements of the circuit, which is time-consuming and costly. This paper outlines and analyzes the optimization methods for analog circuits in recent years, and draws some summaries that can be used as references for subsequent optimization circuits. The optimization of analog circuits is mainly divided into the optimization of the performance of the hardware in the circuit and the optimization of the circuit structure. Hardware optimization, this paper mainly focuses on the optimization of diodes, transistors, field effect tubes and operational amplifiers, the four main hardware optimizations, from the material, structure, production process and other aspects of the analysis. For the optimization of circuit structure, this paper mainly analyzes from the aspects of algorithms, mathematical models, and the use of integrated methods. The significance of these optimization methods and the outstanding advantages and main application directions of different methods are further explained. The search for optimization methods can reduce the high time cost of analog circuit optimization that is purely dependent on experience and intuition, and is significant in increasing efficiency.

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Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

Cited by 5 publications

References 48 publications

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

High-performance MoS₂ phototransistors with Hf_1–xAl_xO back-gate dielectric layer grown by plasma enhanced atomic layer deposition

Current Status, Development, And Application of Optimization Methods for Analog Circuits

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Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

Cited by 5 publications

References 48 publications

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

High-performance MoS2 phototransistors with Hf1–x Al x O back-gate dielectric layer grown by plasma enhanced atomic layer deposition

Current Status, Development, And Application of Optimization Methods for Analog Circuits

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Product

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Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

High-performance MoS₂ phototransistors with Hf_1–xAl_xO back-gate dielectric layer grown by plasma enhanced atomic layer deposition