Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO₃/Pt capacitors fabricated by sputtering process

Solution deposition processing and electrical properties of Ba(Ti1−xSnx)O3 thin films

“…It indicates that an increase in crystallinity of the films contributed to an increase in dielectric constant. [23][24][25] The response time of the domain switching is about 1 ns to 1 s, which is much faster than the response time of the instruments used for conventional leakage measurements, which is on the order of 1 ms at the fastest. These results are consistent with the SEM analysis (Fig.…”