Solution deposition processing and electrical properties of Ba(Ti_1−xSn_x)O₃ thin films

Abstract

Ba(Ti 1−x Sn x )O 3 (0 Յ x Յ 0.3) thin films were deposited on a platinized silicon substrate by a solution deposition process with methoxyethanol, water, and propylene glycol as solvents. Dielectric properties and current-voltage characteristics of the thin films were investigated in conjunction with phase evolution and microstructures by varying heating temperatures and Sn contents (x). Thin films annealed above 700°C showed a pure perovskite phase with nanoscaled grains (20-30 nm). The dielectric constant of the thin films depended on the Sn content and showed a maximum value of 330 at x ‫ס‬ 0.15. The leakage current behavior of an optimum composition corresponding to x ‫ס‬ 0.15 was examined by correlating with charge transport mechanisms. Schottky emission was found to be predominant at voltages less than 6.8 V, and Fowler-Nordheim tunneling appeared to be responsible above 6.8 V. The Schottky barrier of the Ba(Ti 0.85 Sn 0.15 )O 3 -Pt interface was determined to be 1.49 eV.

Preparation, structure and dielectric property of barium stannate titanate ceramics

“…In the next 20 years, few papers were published involving BTS. Since 1990, although several works had been reported on ceramics [2][3][4][5] and thin film [6][7][8][9][10] preparation, and on phase transition [3,4,[11][12][13][14], electromechanical [15][16][17], electrical [18,19] and dielectric [3,[20][21][22][23][24] properties, the common academic attention is fairly insufficient compared with that of barium strontium titanate.…”

Enhanced Tunability of BaTixSn1−xO3 Films on Dielectric Substrate

“…Depending on the ratio of the concentrations of Ti and Sn atoms, the value of the relative dielectric permittivity of BTS solid solution in the maximum can reach significant values (2-3) × 10 4 [15]; the introduction of chemically more stable Sn atoms into a solid solution instead of Ti can lead to a decrease in through conductivity and dielectric losses, to a significant increase in the electrical strength of the material, and, as a result, to the possibility of increasing the applied electric field and increasing the dielectric nonlinearity [16]. A number of papers have been published that investigate the structural and electrophysical properties of BTS thin films [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34], including works dedicated to microwave investigations [25,34,35]. The studied films were obtained by chemical solution deposition [22,23,36], ion-plasma sputtering [17][18][19]29,30,34,35], sol-gel technology [24][25][26][27][28]31,32] and laser ablation…”

“…A number of papers have been published that investigate the structural and electrophysical properties of BTS thin films [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34], including works dedicated to microwave investigations [25,34,35]. The studied films were obtained by chemical solution deposition [22,23,36], ion-plasma sputtering [17][18][19]29,30,34,35], sol-gel technology [24][25][26][27][28]31,32] and laser ablation [33]. In the vast majority of works, experimental data on dielectric losses in FE capacitive structures are given for the frequency range of 1 kHz-1 MHz.…”

“…In addition, it should be noted that the high dielectric nonlinearity of capacitive elements based on the studied films (tunability up to 72%) is demonstrated exclusively in plane-parallel metal-dielectric-metal (MDM) structures, i.e., in cases when the film is formed on a conducting electrode [22][23][24][28][29][30]33,35], while in works devoted to the growth of FE layers on dielectric materials data on tunability from 15 to 46% are given [25][26][27]31,32,34,36], and only on expensive monocrystal substrates. The design of MDM capacitors allows the use of small control voltages to change the capacitance, but exactly because of it, the use of such structures is possible only in small-signal devices.…”

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3 Thin Films Prepared Using Chemical Solution Deposition

“…Barium tin titanate [Ba(Ti 1− Sn )O 3 -BTS] also received much research attention because of its high dielectric constant and relaxor ferroelectric characteristics and these are good candidate materials for applications in microelectronic devices [22][23][24]. Ferroelectric-paraelectric phase transition temperature decreased with increasing Sn 4+ concentration in Ba(Ti 0.85 Sn 0.15 )O 3 , with more diffused phase transition behavior [25].…”