Interface properties of MBE grown epitaxial oxides on GaAs

Contreras-Guerrero, R.; Edirisooriya, M.; Noriega, O.C.; Droopad, R.

doi:10.1016/j.jcrysgro.2012.12.131

Cited by 15 publications

(7 citation statements)

References 13 publications

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“…Leveraging all prior expertise, high‐quality STO/GaAs was demonstrated using 1/2 ML Ti for surface passivation, with detailed RHEED and XPS analysis of the structure and interface . This work further explored the unconventional use of oxygen plasma instead of molecular oxygen.…”

Section: Growth Physical and Electronic Structurementioning

confidence: 99%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.

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Section: Growth Physical and Electronic Structurementioning

confidence: 99%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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“…Other groups have reported the growth of SrTiO 3 on GaAs [124–127]. Wu et al performed the growth by laser MBE without Ti pre-deposition, by ablating a SrTiO 3 single crystalline target [124].…”

Section: Mbe Of Batio3 On Semiconductors: Growth and Crystalline Strumentioning

confidence: 99%

“…Such layers were then used as a template for subsequent La 0.7 Sr 0.3 MnO 3 /PZT stack deposition by pulsed laser deposition [126]. Contreras-Guerrero et al [127] studied the interface properties (Fermi level pinning) of films grown in different oxygen conditions on c (4 × 4) As-stabilized GaAs (001) surface with ½ ML Ti pre-deposition: first, 2 nm of SrTiO 3 was grown under molecular oxygen and then the growth was continued either under molecular oxygen or under atomic oxygen. From room temperature photoluminescence experiments, they reported that the density of interfacial defects increased when an oxygen plasma was used and that the Fermi level was pinned similarly to that of a GaAs layer with a native oxide.…”

Section: Mbe Of Batio3 On Semiconductors: Growth and Crystalline Strumentioning

confidence: 99%

A review of molecular beam epitaxy of ferroelectric BaTiO₃films on Si, Ge and GaAs substrates and their applications

Mazet

Yang

Kalinin

et al. 2015

Science and Technology of Advanced Materials

107

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SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.

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“…A 2 unit cell STO layer was then deposit on the Ti/GaAs surface prior to the deposition of BaTiO 3 as outlined in Ref. 19. Figure 1(c) shows the RHEED pattern along the oxide [110] azimuth after the growth of the 2 unit cells STO layer indicating coherent nucleation of the oxide film.…”

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confidence: 99%