High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si (111) Appl. Phys. Lett. 96, 013106 (2010); 10.1063/1.3284660Exciton localization and quantum efficiency-A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells

Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 1010 cm−2 and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10−10 cm3s−1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

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