Near band-edge optical properties of cubic GaN

Fernandez, J.R.L.; Noriega, O.C.; Soares, Julio A. N. T.; Cerdeira, F.; Menêses, E.A.; Leite, J. R.; As, D. J.; Schikora, D.; Lischka, K.

doi:10.1016/s0038-1098(02)00768-8

Cited by 11 publications

(11 citation statements)

References 12 publications

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“…It is of note that the peak energy of the D 0 X features are lower than reported in the literature by between 0.03 and 0.04 eV [7,9,11,12,[21][22][23][24][25][26]. This may be a result of a reduced bandgap due to tensile strain in the GaN [21], which lies between 0.5 × 10 −3 and 3 × 10 −3 for sample A at room temperature, as revealed by high resolution XRDω − 2θ measurements of multiple on-and off-axis reflections.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence studies of cubic GaN epilayers

Church

Hammersley

Mitchell

et al. 2017

Physica Status Solidi (b)

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The luminescence properties of cubic GaN films grown upon 3C‐SiC/Si (001) substrates by MOCVD were investigated. The spectra show luminescence peaks which are associated with donor bound exciton recombination and donor acceptor pair recombination. A reduced peak energy for the D0X emission compared with values reported in the literature suggests a tensile‐strain‐reduced bandgap of approximately 3.27 eV, which is consistent with the absorption edge in photoluminescence‐excitation spectroscopy. The presence of hexagonal material introduces a broad emission band at 3.40 eV with a FWHM of 190 meV, extending to energies up to 3.60 eV. The intensity of this emission scales linearly with excitation power, its peak energy and width remaining unchanged. This band is associated with an absorption edge below 3.70 eV and therefore is not caused by absorption into phase‐pure cubic or hexagonal GaN. The photoluminescence lifetimes measured across this band reduce from 0.40 to 0.20 ns with increasing emission energy. All these observations can be explained by considering a type‐II‐band alignment adjacent to stacking faults within the cubic GaN.

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Section: Resultsmentioning

confidence: 99%

Photoluminescence studies of cubic GaN epilayers

Church

Hammersley

Mitchell

et al. 2017

Physica Status Solidi (b)

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“…Although the theoretical predictions for the hexagonal GaN structures considered here were not yet been observed experimentally, optical properties of cubic GaN samples deposited by plasma-assisted MBE on (001) GaAs substrates, with and without doping with carbon atoms, were the focus of recent experimental work [26]. Contrary to their hexagonal counterparts, the cubic structures can be grown free from modulation, making them a good candidate for further investigations on the optical-phonon spectra in these compounds, using the same theoretical model employed here.…”

Section: Resultsmentioning

confidence: 99%

Confinement of polar optical phonons in AlN/GaN superlattices

Medeiros

Albuquerque

Farias

et al. 2005

Solid State Communications

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“…For sample A1, it closely resembles a broadened step function, a line-shape characteristic of an M 0 singularity with an exciton that is broad enough to merge with the continuum. 27 Fitting this spectrum with a broadened step function, we obtain for the photon energy of the absorption edge and broadening parameter ͑full width at half maximum͒ the values: E g ϭ3.26 eV and ⌫ϭ50 meV, respectively. 27 The absorption edge profile of the other samples has the exciton well resolved from the continuum, as a result of their improved crystalline quality.…”

Section: Resultsmentioning

confidence: 99%

“…27 Fitting this spectrum with a broadened step function, we obtain for the photon energy of the absorption edge and broadening parameter ͑full width at half maximum͒ the values: E g ϭ3.26 eV and ⌫ϭ50 meV, respectively. 27 The absorption edge profile of the other samples has the exciton well resolved from the continuum, as a result of their improved crystalline quality. This profile is well fitted with the combination of a Gaussian ͑exciton absorption͒ and broadened step function ͑con-tinuum͒.…”

Section: Resultsmentioning

confidence: 99%

Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN

et al. 2003

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We performed optical and x-ray diffraction experiments on carbon doped cubic-GaN samples, deposited by plasma-assisted molecular beam epitaxy on ͑001͒ GaAs substrates, for various carbon concentrations. The samples were studied by Raman, photoluminescence, and photoluminescence excitation spectroscopies. These techniques give some insight into the mechanism of carbon incorporation in the material. Detailed analysis of these spectra leads to a picture in which carbon initially enters into N vacancies producing a marked improvement in the crystalline properties of the material. At higher concentrations it also begins to enter interstitially and form C complexes, with a consequent decrease of crystalline quality. This increase and later decrease of crystalline quality of our samples with the addition of C were also detectable in x-ray diffraction scans. A model calculation of the localized vibrations of the C atom in the GaN lattice allows for the interpretation of a feature in the Raman spectrum of some samples, which reinforces this view.

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Near band-edge optical properties of cubic GaN

Cited by 11 publications

References 12 publications

Photoluminescence studies of cubic GaN epilayers

Photoluminescence studies of cubic GaN epilayers

Confinement of polar optical phonons in AlN/GaN superlattices

Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN

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