2002
DOI: 10.1016/s0022-3093(01)01029-8
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Interface recombination in heterojunctions of amorphous and crystalline silicon

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Cited by 76 publications
(47 citation statements)
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“…2) evidenced "Sshaped" J-V curves. This effect has been previously reported by different groups, but concerning different heterojunction emitters with traditional back contacts and it is attributed to an unfavourable energy band configuration for carrier collection [14,15].…”
Section: Resultssupporting
confidence: 53%
“…2) evidenced "Sshaped" J-V curves. This effect has been previously reported by different groups, but concerning different heterojunction emitters with traditional back contacts and it is attributed to an unfavourable energy band configuration for carrier collection [14,15].…”
Section: Resultssupporting
confidence: 53%
“…Prior to film deposition, well-controlled surfaces are required to obtain high-quality passivation [54][55][56]. Hydrofluoric acid (HF) etching is known from the semiconductor industry to produce c-Si surfaces which are contamination-free and chemically stable for subsequent processing [57].…”
Section: Substrates and Surface Preparationmentioning
confidence: 99%
“…This solar cell had an efficiency of 13.6% under AM1.5 illumination. The effective recombination velocity S eff and the open circuit voltage V OC characterise in particular the losses at the interface [6]. From the characterisation measurements it was found that the effective recombination velocity S eff was 1000 cm/s while the open-circuit voltage V OC reached 640 mV.…”
Section: Resultsmentioning
confidence: 98%
“…Contact to the a-Si:H(n + ) emitter was made by a 80 nm thick ZnO(Al) layer, which provided reasonably good lateral conductivity and acted as antireflection coating minimizing reflection at about 650 nm. Details of preparation and characterization of the sample are given elsewhere [6]. The device used as LED in this study had an active area of 4 x 4 mm 2 .…”
Section: Resultsmentioning
confidence: 99%
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