Interface roughness scattering in laterally coupled InGaAs quantum wires

Kunets, Vasyl P.; Teodoro, M. D.; Dorogan, V. G.; Lytvyn, P. M.; Tarasov, G. G.; Sleezer, Robert; Ware, Morgan E.; Mazur, Yu. I.; Krasiński, Jerzy S.; Salamo, Gregory J.

doi:10.1063/1.3532098

Cited by 14 publications

(5 citation statements)

References 21 publications

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“…In order to understand the physical process that determines the transport and recombination of non-equilibrium carriers, we investigate photoconductivity transients at different temperatures (80-300 K). Figure 3 shows the photoconductivity rise and decay curves of the InGaAs-GaAs structures with different InGaAs coverages under illumination with light pulse (λ=650 nm) and a width of 0.2 ms at 80 K. The PC measurements were performed applying a bias voltage of 50 mV along the [−233] direction, when the contribution of onedimensional transport channels for the photoexcited carriers due to the QWRs is most noticeable [16][17][18].…”

Section: Photoconductivity Transientsmentioning

confidence: 99%

“…In previous reports [16][17][18], it was shown that InGaAs-GaAs systems with QWRs are highly anisotropic when examined for polarized PL, conductivity, and photoconductivity and have a complex band structure due to the coexistence of one-dimensional (1D) and two-dimensional (2D) densities of states. Periodic doping of the GaAs spacer layers further complicates optical and photoelectric properties, charge carrier dynamics, and relaxation in InGaAs-GaAs heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

“…shows the photoconductivity rise and decay curves of the InGaAs-GaAs structures with different InGaAs coverages under illumination with light pulse (λ=650 nm) and a width of 0.2 ms at 80 K. The PC measurements were performed applying a bias voltage of 50 mV along the [−233] direction, when the contribution of onedimensional transport channels for the photoexcited carriers due to the QWRs is most noticeable[16][17][18]. Rise curves are well fitted by an exponential function I t t with parameter rs t from 0.025 ms for the structures with 11 Ml to…”

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confidence: 99%

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Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

et al. 2017

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The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

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Section: Photoconductivity Transientsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

et al. 2017

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“…Also, InP is useful for electronic device fabrication showing good performance as field-effect devices [11,12]. Furthermore, InP nanowires are being used in theoretical and experimental approaches for deep investigations on electron confinement in low dimensional structures [13][14][15][16][17]. Recently, theoretical findings also elucidate changes in absorption and radiative lifetimes of these nanoestructures [18,19].…”

Section: Introductionmentioning

confidence: 99%

Optical and transport properties correlation driven by amorphous/crystalline disorder in InP nanowires

Kamimura

Gouveia

Carrocine

et al. 2016

J. Phys.: Condens. Matter

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Indium phosphide nanowires with a single crystalline zinc-blend core and polycrystalline/amorphous shell were grown from a reliable route without the use of hazardous precursors. The nanowires are composed by a crystalline core covered by a polycrystalline shell, presenting typical lengths larger than 10 μm and diameters of 80-90 nm. Raman spectra taken from as-grown nanowires exhibited asymmetric line shapes with broadening towards higher wave numbers which can be attributed to phonon localization effects. It was found that optical phonons in the nanowires are localized in regions with average size of 3 nm, which seems to have the same order of magnitude of grain sizes in the polycrystalline shell. Regardless of the fact that the nanowires exhibit a crystalline core, any considerable degree of disorder can lead to a localized behaviour of carriers. In consequence, the variable range hopping was observed as the main transport instead of the usual thermal excitation mechanisms. Furthermore the hopping length was ten times smaller than nanowire cross-sections, confirming that the nanostructures do behave as a 3D system. Accordingly, the V-shape observed in PL spectra clearly demonstrates a very strong influence of the potential fluctuations on the exciton optical recombination. Such fluctuations can still be observed at low temperature regime, confirming that the amorphous/polycrystalline shell of the nanowires affects the exciton recombination in every laser power regime tested.

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“…The QWRs structure has a good configuration that allow the device to have more efficient light absorption compared to zero-dimensional systems [14]. Moreover, photocurrent can be generated in the plane of the QWRs [16,17]. In addition, QWRs are expected to have applicable life-time of photogenerated carriers [17].…”

Section: Introductionmentioning

confidence: 99%

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

et al. 2016

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Interface roughness scattering in laterally coupled InGaAs quantum wires

Cited by 14 publications

References 21 publications

Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

Optical and transport properties correlation driven by amorphous/crystalline disorder in InP nanowires

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

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