Admittance spectroscopy is employed to explain the property differences observe between organic thin film transistors (OTFTs) fabricated with various gate insulator layers based on poly(4-vinylphenol) (PVP) and poly(methyl methacrylate) (PMMA). The objective is achieved through the development of an equivalent circuit and a compact analytical model of the device core structure, namely, the metal-insulator-semiconductor (MIS) capacitor. The model fitting with experimental data allows to extract a wide range of parameters and, in particular, demonstrates the critical role played by the interface between insulator and semiconductor layers.