Interfacial Characteristics and Dynamic Process of Au- and Cu-Wire Bonding and Overhang Bonding in Microelectronics Packaging

Li, Junhui; Zhang, Xiaolong; Linggang, Liu; Han, Lei

doi:10.1109/jmems.2012.2230316

Cited by 35 publications

(7 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was concluded that a thick-Al approach led to improved reliability of Cu-wire bonding. By decreasing the hardness of the overhang die, which significantly reduced the impact of the overhang bonding process, and improving features of the hard Cu-wire overhang bonding, Cu-wire overhang bonding performance significantly increased [14]. The intermetallic phases Al 2 Au, AlAu 4 , or Al 3 Au 8 were formed at the Au-Al bond interface, and the thickness of the intermetallic phases was 100-300 nm.…”

Section: Introductionmentioning

confidence: 99%

Characterization of microstructure, toughness, and chemical composition of friction-welded joints of UNS S32205 duplex stainless steel

2014

View full text Add to dashboard Cite

Friction welding is a solid-state joining process which is applied extensively because of its advantages such as low heat input, efficient application, ease in manufacturing, and environmental friendliness. The present study investigates the mechanical and metallurgical properties of UNS S32205 duplex stainless steel frictionwelded joints. The process parameters, namely friction pressure, upsetting pressure, and rotational speed are individually varied from low level to high level (within the range of the machine setup) and their effects on the joint properties are analyzed. The partial-deformation zone had higher hardness than the weld and base metal. The toughness of the joints was evaluated at room temperature and at subzero temperature conditions. The impact toughness of the friction-welded joints was found to be superior to fusion-joined duplex stainless steel in room and cryogenic conditions.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of microstructure, toughness, and chemical composition of friction-welded joints of UNS S32205 duplex stainless steel

2014

View full text Add to dashboard Cite

show abstract

“…TSV will provide vertical interconnection functions between multilayer chips in the advanced 3-D integrated circuit design [8]- [12]. TSV consists of an insulation layer, a barrier layer, a seed layer, and a filler [13]- [16], as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

A Measurement Method on Nanoscale Thickness of the Ti Barrier Layer of TSV Structure for 3-D IC

Tian

et al. 2016

IEEE Trans. Compon., Packag. Manufact. Technol.

Self Cite

View full text Add to dashboard Cite

As the characteristic dimension of an integrated circuit (IC) continuously scales down, together with the requirements of low power consumption, multiple functionality, and cost effectiveness, the conventional IC transforms into a 3-D IC. Through-silicon via (TSV) is a promising and preferred way to realize the reliable interconnection for a 3-D IC. Thus, accurate measurement of the critical structural parameters plays an important role in securing the integrity and reliability of TSV. In this paper, a novel image-processing-based measurement method is proposed to measure the barrier layer thickness and step coverage of TSV. Since the thickness of the barrier layer is generally less than 100 nm, which is a drawback of the conventional SEM method, we used the material information from SEM as well as structural prior of TSV to infer the barrier layer thickness on nanoscale. In addition, we further achieved the step coverage of thin films in TSV using the proposed measurement method.Index Terms-Barrier layer thickness, image processing, step coverage, through-silicon via (TSV).

show abstract

“…On the other hand, wire bonding is probably the most cost-effective process 6) for connecting semiconductor chips with a technology node of 28 nm and above to bond stitches on the interposers, and the available wire bonding pad pitch is likely to continue to narrow. Since expensive gold wires have recently been replaced with silver or copper wires to reduce cost, [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] copper wires have been used in most consumer electronics. However, they are less common in automotive and industrial products, since copper wire bonds are easily corroded and become detached at high temperature and humidity as the bond area decreases.…”

Section: Introductionmentioning

confidence: 99%

Reliability of copper wire bonds on a novel over-pad metallization

Kawashiro

Itoh

Maeda

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Wire bonding technology is used in most semiconductor products. Recently, high gold prices have forced semiconductor manufacturers to replace Au wires with Cu wires. Because Cu wire bonds are vulnerable to high temperature and humidity, they remain unpopular in automotive and industrial applications with narrow-bond-pad pitches and small deformed ball diameters. To avoid forming the corrosive Cu-rich intermetallic compound Cu 9 Al 4 , the use of a Ni/Pd(/Au) over-pad metallization (OPM) structure produced by electroless plating on the Al metallization has been proposed. However, certain technical issues must be overcome, such as variations in the purity and thickness of the plating. To tackle these issues, a novel OPM structure produced by physical vapor deposition is proposed and evaluated in this study.

show abstract

Interfacial Characteristics and Dynamic Process of Au- and Cu-Wire Bonding and Overhang Bonding in Microelectronics Packaging

Cited by 35 publications

References 40 publications

Characterization of microstructure, toughness, and chemical composition of friction-welded joints of UNS S32205 duplex stainless steel

Characterization of microstructure, toughness, and chemical composition of friction-welded joints of UNS S32205 duplex stainless steel

A Measurement Method on Nanoscale Thickness of the Ti Barrier Layer of TSV Structure for 3-D IC

Reliability of copper wire bonds on a novel over-pad metallization

Contact Info

Product

Resources

About