Two-dimensional metal chalcogenide
film has attracted considerable
interest for its use as an emerging device material for nanoelectronics.
The film has been synthesized by various methods such as chemical
vapor deposition, molecular beam epitaxy, and thermal vapor sulfurization.
In this study, we took a new approach to synthesize tin disulfide
(SnS2) by using Au–Sn alloy film as a metal seed
deposited on a sapphire substrate. Multilayer SnS2 films
were formed in a ribbon shape on (111)-oriented Au film and were aligned
in the directions of threefold rotational symmetry. Furthermore, the
SnS2 was found to have an epitaxial relationship relative
to the Au film and the sapphire substrate as follows: SnS2[2̅110] || Au[101̅] || Al2O3[011̅0].
The segregation of grains consisting of a Sn-rich phase on the Au
film surface and the subsequent sulfurization of these grains can
be the key to the epitaxial SnS2 ribbon formation.