2001
DOI: 10.1016/s0040-6090(01)01420-1
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Interfacial roughening in lattice-matched GaInP/GaAs heterostructures

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Cited by 7 publications
(7 citation statements)
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“…7(b). This supports the experimental observations given by Wang et al (2000Wang et al ( , 2001, showing that dislocation dipoles due to CM are usually formed near the interface but not on the interface. Also, in the case of s ð1Þ 2 ¼ s ð2Þ 2 ¼ 10 (nm) (Fig.7(b)), approximately s ð1Þ 1 ¼ 5 (nm) and s ð2Þ 1 ¼ 15 (nm) are the most favorable sites of dislocations 1 and 2, respectively, which correspond to the phase boundary, as can be seen in Fig.…”
Section: Composition Profile Vs the Formation Of Dislocation Dipolessupporting
confidence: 91%
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“…7(b). This supports the experimental observations given by Wang et al (2000Wang et al ( , 2001, showing that dislocation dipoles due to CM are usually formed near the interface but not on the interface. Also, in the case of s ð1Þ 2 ¼ s ð2Þ 2 ¼ 10 (nm) (Fig.7(b)), approximately s ð1Þ 1 ¼ 5 (nm) and s ð2Þ 1 ¼ 15 (nm) are the most favorable sites of dislocations 1 and 2, respectively, which correspond to the phase boundary, as can be seen in Fig.…”
Section: Composition Profile Vs the Formation Of Dislocation Dipolessupporting
confidence: 91%
“…In turn, the locally high gradient of the elastic stresses acts as a driving force for the formation of crystal defects, e.g., misfit dislocations, in order to lower the total strain energy stored in the epitaxial film/substrate structure. In this study, our interest is focused on the formation of dislocation dipoles, which were newly observed by Wang et al (2000Wang et al ( , 2001 and are regarded as one of the main mechanisms to relax the strain energy of CM stored in a lattice-matched epitaxial film on a substrate. Elastic stress and strain distributions associated with a dislocation dipole may be expressed simply as the sum of the stress and strain fields of each of two dislocations, unless they are too close to produce highly non-linear interactions.…”
Section: Formation Energy Of a Misfit Dislocation Dipolementioning
confidence: 99%
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“…The elastic energy accumulated in the structure partially favours the interface roughness, in fact, in the literature the latter has been considered as the main cause of the degradation of the top layers in InGaP/GaAs MQWs. Indeed, this effect has been evidenced also in lattice-matched structures containing many interfaces [22]. …”
Section: Lattice Mismatch Effectsmentioning
confidence: 84%