Interstitial Supersaturation And Climb Of Misfit Dislocations In Phosphorus‐Diffused Silicon

Abstract

SUMMARY Bipolar transistors showing the‘emitter‐push effect’ have been investigated by transmission electron microscopy. From the analysis of isolated dislocation helices in the boron base and the phosphorus emitter it is concluded that the diffusion of phosphorus into silicon is coupled with a supersaturation of silicon self‐interstitials. A new generation mechanism for this supersaturation is suggested.