Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices

Mehonić, Adnan; Munde, M; Ng, Wing H.; Buckwell, M; Montesi, L; Bosman, Michel; Shluger, Alexander L.; Kenyon, Anthony J.

doi:10.1016/j.mee.2017.04.033

Cited by 69 publications

(62 citation statements)

References 17 publications

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“…The device may be SET back into the LRS by applying an appropriate voltage to once again reduce the oxide and restore the complete lament. Cycling between the LRS and HRS, which can be done many times (we have achieved >10 7 times, 12 and there are reports in the literature of considerably more in various oxides 13 ), therefore involves the local creation and destruction of only a portion of the lament(s) generated during the electroforming step.…”

mentioning

confidence: 95%

The interplay between structure and function in redox-based resistance switching

Kenyon

Munde

et al. 2019

Faraday Discuss.

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We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an initial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages.Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.

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mentioning

confidence: 95%

The interplay between structure and function in redox-based resistance switching

Kenyon

Munde

et al. 2019

Faraday Discuss.

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“…More details about electrical performance and switching mechanisms in SiO x are given in our previous reports. [16][17][18][19][20] We note that the devices typically operate better in ambient rather than vacuum conditions. Similar behaviour has been reported by other groups as well.…”

Section: (A)mentioning

confidence: 90%

“…We found that the devices are stable at elevated temperatures. 16,18 To characterise the response to optical stimulation, the device was put in the HRS and biased with a constant voltage. Current was sampled every 0.3 s for 15 s. The device was exposed to white light for the central 5 s (orange in Fig.…”

Section: (A)mentioning

confidence: 99%

Light-activated resistance switching in SiOx RRAM devices

Mehonić¹,

Gerard²,

Kenyon³

2017

Applied Physics Letters

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We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410–650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

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“…Furthermore, the microstructure plays a crucial role in air‐stable resistance switching in pure silicon oxide. The columnar structure in sputtered silicon oxide films provides preferential parts for filaments formation . The control of the interface roughness between the bottom electrode and the switching layer affects both the switching voltages and endurance .…”

Section: Neuromorphic Components Designmentioning

confidence: 99%

“…Air‐sensitive switching occurs only in vacuum as the oxidation of conductive filaments occurs in an oxidizing ambient. The second type, air‐stable switching, is possible either in oxygen‐rich or nonoxidizing environments, as conductive filaments form far from surfaces and are more critically affected by the oxide microstructure . The taxonomy of resistance switching in SiO x ‐based RRAMs is shown in Figure .…”

Section: Neuromorphic Components Designmentioning

confidence: 99%

Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

Azghadi

Chen

Eshraghian

et al. 2020

Advanced Intelligent Systems

102

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The ever‐increasing processing power demands of digital computers cannot continue to be fulfilled indefinitely unless there is a paradigm shift in computing. Neuromorphic computing, which takes inspiration from the highly parallel, low‐power, high‐speed, and noise‐tolerant computing capabilities of the brain, may provide such a shift. Many researchers from across academia and industry have been studying materials, devices, circuits, and systems, to implement some of the functions of networks of neurons and synapses to develop neuromorphic computing platforms. These platforms are being designed using various hardware technologies, including the well‐established complementary metal‐oxide semiconductor (CMOS), and emerging memristive technologies such as SiOx‐based memristors. Herein, recent progress in CMOS, SiOx‐based memristive, and mixed CMOS‐memristive hardware for neuromorphic systems is highlighted. New and published results from various devices are provided that are developed to replicate selected functions of neurons, synapses, and simple spiking networks. It is shown that the CMOS and memristive devices are assembled in different neuromorphic learning platforms to perform simple cognitive tasks such as classification of spike rate‐based patterns or handwritten digits. Herein, it is envisioned that what is demonstrated is useful to the unconventional computing research community by providing insights into advances in neuromorphic hardware technologies.

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Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices

Cited by 69 publications

References 17 publications

The interplay between structure and function in redox-based resistance switching

The interplay between structure and function in redox-based resistance switching

Light-activated resistance switching in SiOx RRAM devices

Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

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