1968
DOI: 10.1149/1.2411441
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Intrinsic Stress in Evaporated Metal Films

Abstract: The sign and magnitude of the intrinsic stresses observed in evaporated metal films cannot be predicted from a priori knowledge. In an effort to correlate the observed intrinsic stress, S, with other physical parameters, S has been measured in films of fifteen different metals. The stress was measured in situ by the cantilevered substrate technique. The films were evaporated from an electron bombarded source in vacuums of 10−6 to 10−7 Torr onto glass substrates at room temperature. Under these conditions the i… Show more

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Cited by 201 publications
(41 citation statements)
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“…For a given joint length and width composed of elastically isotropic thin films, the product of residual stress and thickness of each film dictated the final flex angle of the joint. Using a KLA-Tencor Flexus FLP2904 wafer curvature thin film stress device, we first determined that 50-nm films of Cr evaporated by our equipment (thickness measured by using a quartz crystal microbalance integrated within the evaporator) directly onto silicon wafers had residual stresses of Ϸ1 GPa and that 200-250 nm of Cu had tensile residual stresses of Ϸ0.04-0.08 GPa, respectively; these values are consistent with those reported in literature (17). Taking the literature values for elastic moduli of Cr and Cu films to be 144 GPa (30) and 130 GPa (31), the model (details in SI Text) predicted a bend angle of 95°-70°for a Cr/Cu bilayer (with no polymer) composed of a range of Cu thicknesses between 200 and 250 nm, respectively (Fig.…”
supporting
confidence: 88%
See 1 more Smart Citation
“…For a given joint length and width composed of elastically isotropic thin films, the product of residual stress and thickness of each film dictated the final flex angle of the joint. Using a KLA-Tencor Flexus FLP2904 wafer curvature thin film stress device, we first determined that 50-nm films of Cr evaporated by our equipment (thickness measured by using a quartz crystal microbalance integrated within the evaporator) directly onto silicon wafers had residual stresses of Ϸ1 GPa and that 200-250 nm of Cu had tensile residual stresses of Ϸ0.04-0.08 GPa, respectively; these values are consistent with those reported in literature (17). Taking the literature values for elastic moduli of Cr and Cu films to be 144 GPa (30) and 130 GPa (31), the model (details in SI Text) predicted a bend angle of 95°-70°for a Cr/Cu bilayer (with no polymer) composed of a range of Cu thicknesses between 200 and 250 nm, respectively (Fig.…”
supporting
confidence: 88%
“…We fabricated a stressed Cr thin film by thermal evaporation (15)(16)(17)(18) and subsequently evaporated a minimally stressed Cu film to form the bilayer. The flexing of the bimetallic joints (to close the gripper) was driven by the release of residual tensile stress within the Cr thin film, and similar bending behavior of stressed thin films has been previously observed (8,(19)(20)(21)(22)(23)(24).…”
mentioning
confidence: 99%
“…While more data is needed to confirm this, other work (Ref. 19) on a large number of materials has shown…”
Section: Intrinsic Stressmentioning
confidence: 82%
“…Generally such rearrangements result in the shrinkage of the film. While the film is attached to the substrate a tensile stress develops [8].…”
Section: Rearrangement Of the Atomsmentioning
confidence: 99%