The modifications and extensions of standard continuum models used for a description of material transport due to electromigration with models for the copper microstucture are studied. Copper grain boundaries and interfaces are modeled as a network of high diffusivity paths. Additionally, grain boundaries act as sites of vacancy recombination. The connection between mechanical stress and material transport is established for the case of strain build up induced by local vacancy dynamics and the anisotropy of the diffusivity tensor caused by these strains. High diffusivity paths are set on the surfaces of polyhedral domains representing distintcive grains. These polyhedral domains are connected by diffusive, electrical, and mechanical interface models. For a numerical solution a three-dimensional finite element method is used.

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Abstract-We present a method for prediction of stress in poly-SiGe thin films based on the texture evolution. Models for different stress generation mechanisms are discussed and integrated in an overall simulation scheme. As example a three-dimensional cantilever structure is used to demonstrate the introduced approach, and simulation results are successfully compared with experiment.

Abstract-We present a sophisticated numerical model for the simulation of thermal oxidation on complex three-dimensional structures. This comprehensive oxidation model takes into account that the diffusion of oxidants, the chemical reaction, and the volume increase occur simultaneously in a so-called reactive layer which has a spatial finite width, in contrast to the sharp interface between silicon and dioxide in the conventional formulation. Our oxidation model also includes the coupled stress dependence of the oxidation process, because the influence of stress is shown to be considerable.

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