Inverse analysis of material removal data using a multiscale CMP model

Seok, Jongwon; Kim, Andrew T.; Sukam, Cyriaque P.; Jindal, Anurag; Tichy, John; Gutmann, R.J.; Cale, Timothy S.

doi:10.1016/s0167-9317(03)00365-4

Cited by 11 publications

(6 citation statements)

References 12 publications

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“…The wafer is assumed to be smooth while the pad is considered rough and has 2 * 10 8 asperities per unit area. 16 The asperities are round near the peaks and have a diameter of 50 μm. 16 The asperity height distribution function, relative to the mean plane of asperity peaks is known for uncompressed pads and is assumed to be Gaussian.…”

Section: Model Descriptionmentioning

confidence: 99%

“…16 The asperities are round near the peaks and have a diameter of 50 μm. 16 The asperity height distribution function, relative to the mean plane of asperity peaks is known for uncompressed pads and is assumed to be Gaussian. The coordinate system employed for contact modeling is rigidly attached to the mean volume plane.…”

Section: Model Descriptionmentioning

confidence: 99%

“…The distance between mean asperity height plane and the mean volume plane is μ. 16 The number of effective particles can be written as…”

Section: Modeling Number Of Effective Particlesmentioning

confidence: 99%

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A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Akbar

Ertunç

2021

ECS J. Solid State Sci. Technol.

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Chemical mechanical polishing (CMP) is a process used to obtain planarized surfaces in microelectronic device manufacturing. The planarization is achieved by material removal from the wafer surface by synergistic effect of chemical and mechanical actions. The material removal rate (MRR) in chemical mechanical processes have a linear dependency on applied down pressure. However, some experimental studies have reported nonlinear relationship between MRR and applied pressure. The nonlinearity can be attributed to complex interactions among the wafer, pad, abrasive particles, and chemical agents in the slurry. Therefore, in modelling CMP processes, coupling of both the chemical and mechanical actions is imperative to provide insight into the nonlinear behavior of MRR, because treating the chemical effects only as a mere means of softening the wafer surface fails to explain the nonlinear behavior of MRR in silicon dioxide CMP. Here, we present a model that couples micro-contact mechanics with diffusion of slurry into the wafer and predict MRR in CMP of silicon dioxide. The model is validated with experimental results available in the literature. Moreover, the developed model may be used to explain the nonlinear increase in MRR of silicon dioxide with increasing applied pressure.

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Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

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A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Akbar

Ertunç

2021

ECS J. Solid State Sci. Technol.

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“…The downforce applied on the polishing pad is assumed to be carried by the solid-solid contact of the wafer surface, i.e., the abrasive-wafer interaction and asperity-wafer interaction. The interactions consist of three different models based on the dimensions [46,47], namely the particle scale model, asperity scale model, and wafer scale model, as shown in Fig. 10.…”

Section: Model Based On Contact Mechanismmentioning

confidence: 99%

Chemical mechanical polishing: Theory and experiment

Zhao

2013

Friction

164

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For several decades, chemical mechanical polishing (CMP) has been the most widely used planarization method in integrated circuits manufacturing. The final polishing results are affected by many factors related to the carrier structure, the polishing pad, the slurry, and the process parameters. As both chemical and mechanical actions affect the effectiveness of CMP, and these actions are themselves affected by many factors, the CMP mechanism is complex and has been a hot research area for many years. This review provides a basic description of the development, challenges, and key technologies associated with CMP. We summarize theoretical CMP models from the perspectives of kinematics, empirical, its mechanism (from the viewpoint of the atomic scale, particle scale, and wafer scale), and its chemical-mechanical synergy. Experimental approaches to the CMP mechanism of material removal and planarization are further discussed from the viewpoint of the particle wear effect, chemical-mechanical synergy, and wafer-pad interfacial interaction.

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“…This is followed by inter-wafer interconnection using Cu damascene patterning including HAR via etching and filling, and the damascene patterning process is finalized by chemical-mechanical planarization (CMP). 13,14) To maximize the potential circuit performance improvements using the vertical integration approach described, the wafer alignment accuracy must be in the range of the BEOL dimensions (microns). An Electronics Visions Group (EVG) EV640 SmartViewÔ Aligner is used to provide 1-2 mm alignment accuracy with 200-mm wafers, as was published previously.…”

Section: Vertical Ic Structure and Bonding Adhesive Propertiesmentioning

confidence: 99%

An Evaluation Process of Polymeric Adhesive Wafer Bonding for Vertical System Integration

Kwon

Seok

2005

Jpn. J. Appl. Phys.

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Bonding of wafers using dielectric polymer thin films as bonding adhesives is one of key approaches to monolithic vertical system integration. As the first step for the integration, properties of the polymer desired for baseline adhesive material are studied, followed by the evaluations on bonding results obtained from wafer pairs bonded between a silicon and a glass wafers. Four sequential evaluation procedures are performed after bonding; (1) optical inspection is made to measure the fraction of bonded area, (2) a razor blade test is taken to separate the bonded wafers, (3) a four-point bending method is used to measure bonding strength quantitatively, (4) FTIR is applied to analyze changes in chemical structure. Bonding integrity is evaluated how the intentionally created debond areas of the bonded wafers are changed after the subsequent thinning processes. To date, benzocyclobutene (BCB), FlareTM, and methylsilsesquioxane (MSSQ) and Parylene-N have been considered as bonding adhesives. Among these polymer materials, BCB and FlareTM are selected as initial adhesive materials after a screening process through optical inspection. Wafer pairs bonded using FlareTM have higher bond strength than those using BCB. However, the bond strength of wafer pairs bonded using BCB is still higher than that at the interface between Cu and porous low-k inter-level dielectrics (ILD) (a back end interconnect structure), indicating almost 100% of bonded area reproducibly. In the light of such evaluation results, BCB has been eventually selected as a baseline adhesive material for the wafer bonding prcess for vertical system integration.

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Inverse analysis of material removal data using a multiscale CMP model

Cited by 11 publications

References 12 publications

A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Chemical mechanical polishing: Theory and experiment

An Evaluation Process of Polymeric Adhesive Wafer Bonding for Vertical System Integration

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