Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Abstract

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

Surface-oxide-controlled InGaAs/InAlAs inverted-type metal-oxide-semiconductor high electron mobility transistors for sub-THz high-power amplifiers

“…[3][4][5][6] Especially, HEMTs using the InP-based material with InGaAs channel and InAlAs carrier supply layers can operate in the 300 GHz band owing to their high-electron mobility. 7) In addition, InGaAs/InAlAs inverted-type HEMTs (inverted HEMTs) 8,9) are desirable for suppressing impact ionization, which increases the drain conductance (g d ). Conversely, inverted HEMTs without the carrier supply layer between the gate and the channel may suffer from gate leakage current.…”