An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

In this paper, the overall finite element model is established, to analyze the small-sized floating foundation of a tri-floater and to make a local optimization on the stress concentration area. The transfer functions and the response spectrums of wave load and motion of floating wind turbine system are calculated by AQWA. Besides the concept of the floating foundation group is put forward in this paper. It is small in structure, easy to assemble, and it can be developed for any power of wind field.This concept has a certain reference value for the development of offshore wind industry in China.

The trend towards portability of electronic products expands the application of rigid-flex board, which has become one of the hot spots in PCB industry. Along with the improvement of assembly technology, the improving design of rigid-flex board appears. High Density Interconnection (HDI) is one of the design directions. The key manufacturing parameters of buried /blind via process in manufacturing process of HDI rigid-flex board was studied in detail including material selections, laminate process, drilling process and via metallization. Better manufacturing parameters of buried /blind via were obtained through orthogonal design. It was found over 99.9% vias could pass the test on electrical performance.