Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress

Abstract

The importance of low-field mobility to the performance of deep-sub-100-nm bulk MOSFETs is not well understood. In this work, we investigate experimentally how effective electron mobility at low lateral electric fields relates to velocity in the MOSFET saturation regime, where lateral fields in the channel are high. For short ( e 45 nm) NMOS devices, mobility is modified by externally applying uniaxial stress and the corresponding shifts in electron velocity are found to be significant.

High‐Performance Photoresponsive Organic Nanotransistors with Single‐Layer Graphenes as Two‐Dimensional Electrodes

“…[2,[12][13][14] To reach this goal, it is important to develop materials and paradigms for device architecture and operation to optimize intrinsic function in devices needed for high carrier mobility and high gate efficiency. New forms of carbon, such as single-walled carbon nanotubes (SWNTs) [15][16] and graphene, [17][18] have emerged as promising materials for use in these devices.…”

Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device

“…In particular, a focused electron probe with a diameter of 0.5 nm was scanned over a fourfold quantum layer stack with alternating compressive and tensile strain and diffracted discs have been recorded on a scintillator-free direct electron detector with a frame time of 1 ms. We show that the applied algorithms can accurately detect Bragg beam positions despite a significant point spread each 300 kV electron causes during detection on the scintillator-free camera. For millisecond exposures, we find that strain can be measured with a precision of 1:3 Â 10 À3 , enabling, e.g., strain mapping in a 100 Â 100 nm 2 Precise quantification of lattice strain with high spatial resolution makes several physical properties of, e.g., semiconductor heterostructures accessible: In computer chip industry, charge carrier mobility in metal oxide field effect transistors (MOSFET) is enhanced [1][2][3] by stressors near source and drain. In optoelectronics, local strain is a fingerprint of the local chemical composition and hence plays a key role in understanding spectral properties of light-emitting devices.…”

Strain coefficient measurement for the (100) uniaxial strain silicon by Raman spectroscopy

“…The strain silicon technology has a long history [11][12][13][14]. Four problems are involved in the microelectronics applications.…”