Investigation into sand mura effects of a-IGZO TFT LCDs

Liu, Xiang; Hu, Hehe; Ning, Ce; Shang, Guangliang; Yang, Wei; Wang, Ke; Lu, Xin-Hong; Lee, Woobong; Wang, Gang; Xue, Jianshe; Jun, Jung mok; Zhang, Shengdong

doi:10.1016/j.microrel.2016.06.009

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…High‐electron mobility and a low threshold voltage in the IGZO compound has proved to be an efficient material since reducing the energy consumption for electronic devices applications . Nowadays, amorphous and crystalline IGZO ceramic compound is a relevant material, which is currently applied in modern technology …”

Section: Introductionmentioning

confidence: 99%

Phase stability, microstructure, and dielectric properties of quaternary oxides In₁₂Ti₁₀A₂BO₄₂ (A: Ga or Al; B: Mg or Zn)

et al. 2018

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were synthesized by the solidstate reaction method and the dielectric behavior is reported. The samples were submitted to different sintering temperatures (1473-1773 K) for 24 hours and the phase stability and microstructure were analyzed by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). It is found that the phase decomposition occurs above of 1573 K. Microstructure images showed an increase in the grains size as sintering temperature was raised. The dielectric permittivity as a function of temperature and frequency showed acceptable dielectric constant (15-30) and low dielectric loss (tan δ << 1) values in a wide range of temperature. The band gap obtained by the optical spectrum analysis is about 3.5 eV indicating good dielectric insulating compounds. Furthermore, the electrical conductivity, the activation energy, and the conduction mechanisms are analyzed and discussed in a whole range of temperature. The good dielectric values, ε′ (15-20) and tan δ (~0.004), and their behavior (almost independent of the frequency and temperature) almost constant within a wide range of temperature make these quaternary oxides interesting in electroceramic applications.

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Section: Introductionmentioning

confidence: 99%

Phase stability, microstructure, and dielectric properties of quaternary oxides In₁₂Ti₁₀A₂BO₄₂ (A: Ga or Al; B: Mg or Zn)

et al. 2018

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“…Due to its stable and homogeneous amorphous state, high mobility (>10cm 2 /V.s), low preparation temperature, excellent large-size uniformity, the IGZO, as an amorphous oxide semiconductor(AOS), has attracted extensive attention as the TFT channel layer since its first report in 2004 by Hosono's group [1]. However, IGZO TFT still has been confronted with some stability problems, such as the uneven display (Mura) of the panel causing by the shift of threshold voltage under some external factors like bias stress [2]. For example, although the mobility and SS of IGZO TFT prepared by Li et al were up to 11.1 cm 2 /V.s and as low as 0.2 V/dec, respectively, ΔVth reached 12.0 Vat -10 V bias for 1400 s, hindering its application in FPD [3].…”

Section: Introductionmentioning

confidence: 99%

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Xiong

Fang

et al. 2023

Symp Digest of Tech Papers

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To improve the electrical properties and stability of thin‐film transistor (TFT) based on the indium gallium zinc oxide (IGZO) channel, the effect of nitrogen‐doping content on the electrical properties of IGZO films and the IGZO TFT were evaluated. It is found that the mobility and carrier concentration of IGZO films gradually decreases ( μ from 18.11 to 11.25 cm2/ V.s, n from 1.76×107 to 4.38×107 cm‐3 ) with the increase of N2 flow content (0‐8sccm). N‐doping can evidently improve the positive bias stress(PBS) stability of IGZO TFT. Typically, the low‐content N‐doping (1 sccm) can significantly boost the stability of IGZO:N TFT (ΔVth = 3.3 V vs ΔVth=9.54 V for the undoped counterpart), while the electrical properties is at almost no degradation with the mobility and on‐off current ratio (Ion/Ioff)as high as 16.59 cm2 /V.s and 3.55×107, and the sub‐threshold swing (SS) and threshold voltage (Vth) as low as 0.32 V/dec and 1.49 V, respectively. These outstanding reliability performance indicates that the N‐doping with appropriate low‐content is a facile and economical way to improve the electrical properties and stability of IGZO TFT.

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Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Yip

Dong

et al. 2019

Nano Res.

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Investigation into sand mura effects of a-IGZO TFT LCDs

Cited by 5 publications

References 15 publications

Phase stability, microstructure, and dielectric properties of quaternary oxides In₁₂Ti₁₀A₂BO₄₂ (A: Ga or Al; B: Mg or Zn)

Phase stability, microstructure, and dielectric properties of quaternary oxides In₁₂Ti₁₀A₂BO₄₂ (A: Ga or Al; B: Mg or Zn)

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

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Investigation into sand mura effects of a-IGZO TFT LCDs

Cited by 5 publications

References 15 publications

Phase stability, microstructure, and dielectric properties of quaternary oxides In12Ti10A2BO42 (A: Ga or Al; B: Mg or Zn)

Phase stability, microstructure, and dielectric properties of quaternary oxides In12Ti10A2BO42 (A: Ga or Al; B: Mg or Zn)

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

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Phase stability, microstructure, and dielectric properties of quaternary oxides In₁₂Ti₁₀A₂BO₄₂ (A: Ga or Al; B: Mg or Zn)

Phase stability, microstructure, and dielectric properties of quaternary oxides In₁₂Ti₁₀A₂BO₄₂ (A: Ga or Al; B: Mg or Zn)