Investigation of AIIIBvSi Heterojunctions Grown by Laser Deposition

Abstract

Heteroepitaxial single crystalline films of GaP, GaAs, and InAs are grown on Si (100) and (111) substrates by laser vacuum epitaxy (LVE). Photoelectric properties as well as I–U and C–U characteristics and Hall mobilities in the LVE grown AIIIBv–Si heterojunctions are measured. High electron mobility (3000 cm2 V−1 s−1) and high efficiency (21%) are obtained for the InAs–Si heterojunction with a lattice mismatch of the components of about 11%. The band diagrams according to the experimental data are constructed. Carrier transport mechanisms and the specific features of the LVE process are discussed.

Luminescence of Long-Term Ordered Pure and Doped Gallium Phosphide

“…For instance, a superlattice from GaP/GaP:N with a period on the order of the Bohr radius, which is equal to 5 nm, can be prepared by molecular-beam epitaxy (MBE) in combination with laser-assisted epitaxy (LAE). 19,21,33,34 In any case, independently of the method of creation, the impurity-modified crystal lattices and the excitonic (as well as biexcitonic) phase with translational symmetry are very interesting objects, the properties and possible applications of which are now under investigation. It was the intention of this work to show the effects of impurity ordering on the phonon spectra and luminescence of these materials.…”

“…For this project, we will apply the technology of nanoparticles and nanocomposites as well as artificial ordering of impurity disposition in doped GaP with the help of modern epitaxial technologies. 9,13,[19][20][21] Thus, the current joint project of our institutions will realize new types of emitters, converters, and accumulators of light on the basis of successful implementation of organic and semiconducting materials.…”

Excitonic Crystal, Nanotechnology and New Prospect for Optoelectronics

“…Besides the long-term ordering, the combined methods of laser assisted and molecular beam epitaxies [40][41][42] will be applied to fabrication of device structures with artificial periodicity; together with classic methods of perfect crystal growth, they can be employed to realize impurity ordering that would yield new types of nanostructures and enhanced optoelectronic device performance.…”

Rectification and intrinsic photocurrent of GaAs∕Si photodiodes formed with pulsed-laser deposition at 1064nm

“…2 and 3 show the fit to the data with ␥ = 2.5 and ␤ = 1151.24, and ␥ = 1.5 and ␤ = 878.48, respectively. Equation ͑1͒ represents a modified version of the common formula, 9,14 which has the presumably constant reverse current in front of the exponential function rather than a bias dependent parameter. The reason for the additional fitting parameter is that the GaAs/ Si interface does not result in an abrupt junction but dipole alignments and interfacial charge movements, which do not coincide with common diode characteristics, take place.…”

“…Specifically, PLD of the technologically extremely appealing hetero-pairing GaAs-on-Si is barely investigated although attempts have been reported already in the 1980s. 9 The last year, we formed operative GaAs/ Si photodiodes by depositing doped GaAs on counter doped Si wafers with nanosecond PLD at 355 nm, 532 nm, and 1064 nm. 10,11 Analyzing these preliminary data, PLD at 1064 nm captured our intention since the intrinsic photocurrent ͑PC͒ considerably differed from that of samples formed with the green and ultraviolet line.…”