2003
DOI: 10.1063/1.1540239
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Abstract: The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN high electron mobility transistor ͑HEMT͒ on silicon ͑111͒ substrate is profited to investigate traps that are located between the substrate and the two-dimensional electron gas channel. The transient of the drain current after applying a negative substrate voltage is evaluated in the temperature range from 30 to 100°C. With this method, known as backgating current deep level transient spectroscopy, majority carrier traps with activa… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

3
51
0

Year Published

2003
2003
2024
2024

Publication Types

Select...
8
1
1

Relationship

1
9

Authors

Journals

citations
Cited by 84 publications
(54 citation statements)
references
References 12 publications
3
51
0
Order By: Relevance
“…The most popular one is deep-level transient spectroscopy (DLTS), which can be performed in capacitance-mode (C-DLTS) [7][8][9] or current-mode (I-DLTS) [10][11][12]. However, capacitance or current transient measurement on real HFET devices can be limited to a degree because of their small dimensions.…”
Section: Introductionmentioning
confidence: 99%
“…The most popular one is deep-level transient spectroscopy (DLTS), which can be performed in capacitance-mode (C-DLTS) [7][8][9] or current-mode (I-DLTS) [10][11][12]. However, capacitance or current transient measurement on real HFET devices can be limited to a degree because of their small dimensions.…”
Section: Introductionmentioning
confidence: 99%
“…Changes in the conductivity can then be used to quantify bulk charge storage and trapping. The key advantage of this approach, 9,6,10,11 is that surface effects and trapping are excluded, allowing unambiguous measurement of buffer trapping alone. Only negative substrate bias, V SUB , is considered here since this corresponds to the polarity experienced by a transistor under OFF state conditions.…”
mentioning
confidence: 99%
“…However, recent reports show that the bulk traps in the semi-insulating GaN buffer also can cause the serious current collapse in AlGaN/GaN HFETs [3]. Previously, the bulk traps in the semi-insulating GaN buffer have been mainly investigated using the capacitance-mode deep level transient spectroscopy (C-DLTS) [4], the backgating current transient spectroscopy [5,6], and the drain current transient method [7][8][9]. C-DLTS is a powerful and well-established technique for the extraction of bulk traps in semiconductor devices.…”
Section: Introductionmentioning
confidence: 99%