Investigation of charging mechanisms in metal-insulator-metal structures

Exarchos, M.; Theonas, V.; Pons, Patrick; Papaioannou, G.; Melle, Sonia; Dubuc, David; Cocetti, F.; Plana, R.

doi:10.1016/j.microrel.2005.07.094

Cited by 24 publications

(7 citation statements)

References 6 publications

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“…These polarization mechanisms occur simultaneously and any attempt for differentiating them requires methods, such as the thermally stimulated depolarization current, that are not applicable to MEMS switches. 9 In order to proceed, we adopt a simple model, depicted in the inset of Fig. 1.…”

Section: J Psychias and G Konstantinidismentioning

confidence: 99%

Effect of space charge polarization in radio frequency microelectromechanical system capacitive switch dielectric charging

Papaioannou

Exarchos

Theonas

et al. 2006

Applied Physics Letters

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The letter presents the investigation of the temperature dependence of the charging mechanism of dielectric layer in radio frequency microelectromechanical system switch. The accumulated charge kinetics are monitored through the transient response of device capacitance when a bias greater than pull-in is applied. The capacitance transient response is shown to follow a stretched exponential law. The “time scale” of the stretched exponential process is found to be thermally activated, with an activation energy that is determined from Arrhenius plot.

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Section: J Psychias and G Konstantinidismentioning

confidence: 99%

Effect of space charge polarization in radio frequency microelectromechanical system capacitive switch dielectric charging

Papaioannou

Exarchos

Theonas

et al. 2006

Applied Physics Letters

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“…It suggests that the amorphous Si 3 N 4 film used in the RF MEMS capacitive switch is a rather disordered system with a degree of defects. In such a system, it is more appropriate to assume that the stretched exponential law is suitable for describing the total transient polarized charge density [19] …”

Section: Resultsmentioning

confidence: 99%

Effect of Environmental Humidity on Dielectric Charging Effect in RF MEMS Capacitive Switches Based on $C$– $V$ Properties

Wang

Tang

Huang

2013

J. Microelectromech. Syst.

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A capacitance-voltage (C-V ) model is developed for RF microelectromechanical systems (MEMS) switches at upstate and downstate. The transient capacitance response of the RF MEMS switches at different switch states was measured for different humidity levels. By using the C-V model as well as the voltage shift dependent of trapped charges, the transient trapped charges at different switch states and humidity levels are obtained. Charging models at different switch states are explored in detail. It is shown that the injected charges increase linearly with humidity levels and the internal polarization increases with increasing humidity at downstate. The speed of charge injection at 80% relative humidity (RH) is about ten times faster than that at 20% RH. A measurement of pull-in voltage shifts by C-V sweep cycles at 20% and 80% RH gives a reasonable evidence. The present model is useful to understand the pull-in voltage shift of the RF MEMS switch. [2012-0144]Index Terms-Capacitance characterization, dielectric charging, humidity, RF microelectromechanical systems (MEMS) capacitive switch, Si 3 N 4 film.

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“…Note that Q and Q 0 are both equivalent sheet charge densities. Based on a linear superposition of simple exponential functions, the stretched exponential function has been used to describe the charging of a capacitor since 1854 [8] and, more recently, capacitors on the MEMS scale [9]. Using the stretched exponential function, (1) may be rewritten as where 0 < β < 1.…”

Section: Introductionmentioning

confidence: 99%

Evaluating and predicting lifetime in capacitive MEMS switches

Goldsmith

O’Brien

Molinero

et al. 2011

Int. J. Microw. Wireless Technol.

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An empirical model has been proposed which provides an excellent fit to the drift of pull-in and release voltages of a MEMS capacitive switch due to bulk dielectric charging. This model correctly fits the linear time dependence over short time spans and transitions to a logarithmic dependence over longer time spans. Using this model to fit measured data enables a quick and efficient determination of the rate of dielectric charging, as well as providing a worst-case prediction of when the switch will fail due to dielectric charging. This model has been used to explore the impact of applied voltage, temperature, and duty factor on switch lifetime.

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Investigation of charging mechanisms in metal-insulator-metal structures

Cited by 24 publications

References 6 publications

Effect of space charge polarization in radio frequency microelectromechanical system capacitive switch dielectric charging

Effect of space charge polarization in radio frequency microelectromechanical system capacitive switch dielectric charging

Effect of Environmental Humidity on Dielectric Charging Effect in RF MEMS Capacitive Switches Based on $C$– $V$ Properties

Evaluating and predicting lifetime in capacitive MEMS switches

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