Investigation of Dual-Material Double Gate Junctionless Accumulation-Mode Cylindrical Gate All Around (DMDG-JLAM-CGAA) MOSFET with High-k Gate Stack for low Power Digital Applications

Gupta, Sumedha; Pandey, Neeta; Gupta, Rashmi

doi:10.1109/indicon49873.2020.9342380

Cited by 11 publications

(4 citation statements)

References 20 publications

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“…In this MOSFET, the doping of the channel is done moderately lower than the source/drain, providing increased conductivity and better performance than JLT. However, SCEs are not negligible in JAM, so, a dual‐metal with gate stacked 18–20 JAM MOSFET was proposed 21 . Dual‐ Metal gates provide enhanced carrier injection effect, gate transport efficiency and better gate control 22 …”

Section: Introductionmentioning

confidence: 99%

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Non‐uniform doping dependent electrical parameters of dual‐metal gate all around junctionless accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET)

Gupta,

Pandey,

Gupta

2024

Int J Numerical Modelling

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This paper presents an analytical analysis of a dual‐metal gate all around junctionless accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET) possessing a horizontal‐like non‐uniform doping profile. The 2‐D electrostatic potential distribution is evaluated using Poisson's equation under the applicable boundary conditions. Also, the impact of straggle length parameter and the peak doping concentration upon the device behavior is also examined. For authenticating the obtained analytical outcomes, TCAD simulations were also performed. Both the results were contrasted and found to be in good agreement. The outcomes obtained for non‐uniform doped DMGAA‐JAM‐NWFET are also compared with that of uniformly doped DMGAA‐JAM‐NWFET and finer electrical characteristics were noticed for non‐uniformly doped device.

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Section: Introductionmentioning

confidence: 99%

“…However, SCEs are not negligible in JAM, so, a dual-metal with gate stacked [18][19][20] JAM MOSFET was proposed. 21 Dual-Metal gates provide enhanced carrier injection effect, gate transport efficiency and better gate control. 22 All the overhead stated devices have considered channel to be uniformly doped.…”

Section: Introductionmentioning

confidence: 99%

Non‐uniform doping dependent electrical parameters of dual‐metal gate all around junctionless accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET)

Gupta,

Pandey,

Gupta

2024

Int J Numerical Modelling

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“…JAM MOSFET possesses better electrical characteristics, more conductivity and less SCEs in contrast to JLT. To decrease the SCEs further, double gates and a gate stack [10][11][12] are introduced to JAM MOSFET, proposing a new structure called Dual-Metal Gate Stack (DMGS) JAM-CSG MOSFET [13].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependency and linearity assessment of dual-metal gate stack junctionless accumulation-mode cylindrical surrounding gate (DMGS-JAM-CSG) MOSFET

Gupta¹,

Pandey²,

Gupta³

2021

Phys. Scr.

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A physics-based temperature-dependent analytical model for a Dual-Metal Gate Stack Junctionless Accumulation-Mode Cylindrical Surrounding Gate (DMGS-JAM-CSG) MOSFET has been presented in this paper by solving the 2D Poisson's equation utilizing the suitable boundary conditions. The device performance is examined at various temperatures (T=100K, 300K and 500K) by observing several parameters like potential, electric field, electron concentration and electron velocity. The obtained outcomes are also contrasted with the outcomes acquired after simulation. Further, the device is also analyzed for its analog performance. Lastly, to check the relevancy of the device for RFIC applications, linearity assessment is performed by evaluating its several figure of merits (FOMs) like second-order and third-order Voltage Intercept Points (VIP2, VIP3), third-order Intercept Input Power (IIP3), third-order Intermodulation Distortion (IMD3) and various higher order transconductances. The obtained results are contrasted with an analogous device and it is discovered that DMGS-JAM-CSG MOSFET device acquires better electrical and linearity characteristics. ATLAS 3D device simulator has been utilized to conduct the simulations.

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“…27 An alternative, Junctionless Accumulation Mode FET, offers low source/drain resistance due to higher doping in source/drain regions and improved carrier mobility through reduced channel doping. [28][29][30][31] Junctionless Accumulation Mode FETs offer significant advantages over conventional MOSFETs and TFETs. They simplify fabrication, excel in gate control, enhance scaling potential, reduce junctionrelated defects for improved reliability, and promise lower-voltage operation with reduced leakage.…”

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confidence: 99%

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Yadav,

Rewari

2023

ECS J. Solid State Sci. Technol.

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The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure’s metal gate is trenched into the Hafnium oxide dielectric layer, which provides the gate with enhanced control over the surface characteristics of the channel. A Trench Gate architecture in a hetero dielectric Gate All Around FET is emulated for the biosensing for the first time. The HDTG-JAM-GAAFET has been compared to Normal Gate JAM Gate-All-Around FET (NG-JAM-GAAFET) biosensors immobilizing a variety of neutral biomolecules and biomolecules having a range of positive and negative charges. The effect of biomolecules on HDTG-JAM-GAAFET biosensor’s output properties, including surface potential, electron concentration, threshold voltage drift (ΔVTH), subthreshold leakage current (IOFF), subthreshold slope (SS), switching ratio (ION/IOFF), ION current sensitivity, transconductance (gm), output conductance (gd), channel resistance (Rch) and intrinsic gain ( A V int ) has been studied. For instance, HDTG-JAM-GAAFET biosensor has drain ON-current sensitivity ( S I ON ) which is 67.68% greater for gelatin biomolecules, 69.4% higher for positive biomolecules, and 8% higher for negative biomolecules bound in the nanogap cavity than that of a Normal Gate JAM Gate-All-Around FET. The proposed device exhibits exceptional performance characteristics and it can effectively identify specific biomolecules to diagnose many diseases, such as breast cancer, lung cancer, and numerous viral infections, using their respective biomarkers.

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Investigation of Dual-Material Double Gate Junctionless Accumulation-Mode Cylindrical Gate All Around (DMDG-JLAM-CGAA) MOSFET with High-k Gate Stack for low Power Digital Applications

Cited by 11 publications

References 20 publications

Non‐uniform doping dependent electrical parameters of dual‐metal gate all around junctionless accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET)

Non‐uniform doping dependent electrical parameters of dual‐metal gate all around junctionless accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET)

Temperature dependency and linearity assessment of dual-metal gate stack junctionless accumulation-mode cylindrical surrounding gate (DMGS-JAM-CSG) MOSFET

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

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