Investigation of gate drive strategies for high voltage GaN HEMTs

Hari, Nikita; Li, Teng; Shelton, Edward

doi:10.1016/j.egypro.2017.05.240

Cited by 13 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For C g measurement, the drain electrode is connected to the source electrode, the gate-biased voltage is swept from 0 to 6 V; for C iss , C oss , and C rss measurements, the gate-biased voltage is 0 V and the V ds is swept from 0 to 300 V. Obvious decrease of C g at high temperatures can be observed; however, the C iss , C oss , and C rss show neglected changes at high temperatures. From [19], the measured C g can be lower than the intrinsic value when the channel resistance (R CH ) increases at high temperatures due to the distribution effect, seen in (6). In this way, the measured variations cannot indicate the change of the intrinsic gate capacitance, meaning that the decrease of µ eff induces larger error to the results when characterising C g .…”

Section: Dynamic Electrical Performancesmentioning

confidence: 98%

“…There are several approaches to make GaN HEMTs normally off, including Cascode structure [2], recessed‐gate metal‐insulator‐semiconductor structure (MIS‐HEMT) [3], fluorine‐treatment [4], and p‐GaN gate cap structure (p‐GaN HEMT) [5]. Considering the difficulties and costs of the manufacturing process, the devices performances, and the reliabilities of the devices, the Cascode HEMTs and p‐GaN HEMTs are commercialised at present [6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

Liu

Tian

et al. 2020

IET Power Electronics

View full text Add to dashboard Cite

High-temperature electrical performances of enhancement-mode (E-mode) high electron mobility transistor with ptype Gallium Nitride (GaN) gate cap are evaluated here. The physics-based mechanisms behind the behaviours are also analysed by the simulations and analytical models. For static electrical performances, the changes of GaN bandgap and the interface states or traps are considered to be influential factors for the little variations of threshold voltage (V T). Meanwhile, the on-state resistance increases and trans-conductance decreases at high temperatures due to the reduction in electron mobility (µ eff). As for blocking characteristic, high temperature-induced increase of leakage current may result from multi-reasons, such as the increase of intrinsic carrier concentration and lowering of trap barrier. In addition, a segmental method is presented to understand the gate leakage current at high temperatures. For capacitance characteristics, the increase of channel resistance makes the measured gate capacitance lower than the intrinsic value. For dynamic electrical performances, the high temperature-induced decrease of µ eff leads to the increase of plateau voltage, bringing the decreases of total switching time and total switching energy loss, which are quite different from those of the devices with traditional metal-oxide-semiconductor structures.

show abstract

Section: Dynamic Electrical Performancesmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

Liu

Tian

et al. 2020

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…GaN HEMTs are aggressively used in high-performance compact power supplies for fast chargers, data centers, light detection and ranging (LiDAR), and other applications because they exhibit exceptional performance as power-switching devices, including ultrahigh switching frequencies and high conversion efficiency [16,170]. It is important to note that the on-state losses and switching losses can greatly decrease while maintaining the desired normally off feature in a cascade GaN HEMT built from a high-voltage D-mode GaN HEMT and a high-speed, low-voltage, and Si MOSFET [170]. It is rather relatively simple since controlling a cascade GaN HEMT is identical to driving a Si-MOSFET.…”

Section: Gan High Electron Mobility Transistor (Hemt)mentioning

confidence: 99%

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Rafin,

Ahmed,

Haque

et al. 2023

Micromachines

View full text Add to dashboard Cite

This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching frequency, and device packaging. The historical evolution of each material is traced from early research devices to current commercial offerings. Significant focus is given to SiC and GaN as they are now actively competing with Si devices in the market, enabled by their higher bandgaps. The paper details advancements in material growth, device architectures, reliability, and manufacturing that have allowed SiC and GaN adoption in electric vehicles, renewable energy, aerospace, and other applications requiring high power density, efficiency, and frequency operation. Performance enhancements over Si are quantified. However, the challenges associated with the advancements of these devices are also elaborately described: material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference. Alongside the cost reduction through improved manufacturing, material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference are critical hurdles of this technology. The review analyzes these issues and emerging solutions using advanced packaging, circuit integration, novel cooling techniques, and modeling. Overall, the manuscript provides a timely, rigorous examination of the state of the art in wide bandgap power semiconductors. It balances theoretical potential and practical limitations while assessing commercial readiness and mapping trajectories for further innovation. This article will benefit researchers and professionals advancing power electronic systems.

show abstract

“…Single-chip D-mode GaN devices with an insulated (MIS) gate structure have a wider gate swing and a reduced gate leakage current, which are advantages over other GaN devices [13]. However, they require a negative gate drive voltage for protection, which is hard to achieve with conventional Si gate drivers, making them challenging to implement in applications [14,15]. In order to overcome the limitations of D-mode GaN power devices, the cascode configuration takes advantage of the MIS structure and has been widely reported as an effective device [16,17].…”

Section: Introductionmentioning

confidence: 99%

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Elangovan

Cheng

Jang

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

A cascode gallium nitride (GaN) switch integrating four paralleled GaN depletion-mode metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMT) and a silicon MOSFET (Si-MOSFET) is presented. Each GaN chip is wire-bonded into a multi-chip power module to scale up the power rating. An optimized symmetric configuration and wire bonding of an integral package are used in the cascode switch. By utilizing an optimized packaging approach, the performance of the multi-GaN-chip cascode switch was evaluated through both static and dynamic characterizations. The constructed cascode switch provides a low-static on-state resistance of 72 mΩ and an off-state blocking capability of 400 V with a positive threshold voltage of 2 V. Analysis of dynamic switching characteristics are discussed and demonstrates stable dynamic on-state resistance (RDS-ON) in inductive load circuits with switching dependencies of voltage, frequency, time, and temperature. The extended defects from buffer caused a minimal decrease in dynamic and static RDS-ON with respect to hard switching conditions. However, there was no noticeable degradation in RDS-ON under harsh switching conditions. This study provides a complete analysis of the multi-GaN-chip cascode switch, including MIS-HEMT manufacturing, cascode packaging and static and dynamic characterizations.

show abstract

Investigation of gate drive strategies for high voltage GaN HEMTs

Cited by 13 publications

References 11 publications

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Contact Info

Product

Resources

About