Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells

Kim, Moon-Seok; Choi, Sung-Jin; Moon, Dong‐Il; Duarte, Juan Pablo; Kim, Sungho; Choi, Yang‐Kyu

doi:10.1016/j.sse.2012.03.008

Solid-State Electronics

2013

DOI: 10.1016/j.sse.2012.03.008

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Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells

Moon-Seok Kim

Sung-Jin Choi

Dong‐Il Moon

et al.

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Cited by 3 publications

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Strain-Sensitive Current-Voltage Characteristics of ZnSe Nanowire in Metal-Semiconductor-Metal Nanostructure

Wang

2013

Chinese Phys. Lett.

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Experimental investigation of electrical transport properties is carried out by in situ transmission electron microscopy (TEM) to explore the effect of local strain in ZnSe nanowires (NWs) on improvement of electron transport of Au-ZnSe NW-Au (M-S-M) nanostructure. The results show that the threshold voltage due to the Schottky barrier at the metal-semiconductor NW (M-S) nanocontact is found to decrease significantly when the ZnSe NW bends at the Au-ZnSe junction by the movable probe which can apply longitudinal compression, leading to current-voltage (𝐼-𝑉 ) characteristics of the M-S-M nanostructure being transformed from a nearly symmetrical to an asymmetrical feature. Alternation of the 𝐼-𝑉 characteristic can be ascribed to significant depression of the Schottky barrier at the M-S nanocontact due to the band gap being narrowed by highly localized strain. As a result, the 𝐼-𝑉 characteristics of the M-S-M nanostructure are strain-sensitive and can be modified by local strain intentionally produced in the semiconductor NW. The modifiable 𝐼-𝑉 characteristics of M-S-M nanostructure confirm that the strain can be used for improvement of transport property of the semiconductor NW-based nanoelectronics with the M-S-M nanostructure.

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Strain-Sensitive Current-Voltage Characteristics of ZnSe Nanowire in Metal-Semiconductor-Metal Nanostructure

Wang

2013

Chinese Phys. Lett.

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Investigation of Physically Unclonable Functions Using Flash Memory for Integrated Circuit Authentication

Kim

Moon

Yoo

et al. 2015

IEEE Trans. Nanotechnology

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Silicon Nanowire Charge Trapping Memory for Energy-Efficient Neuromorphic Computing

Ansari

Mohanan

El‐Atab

2023

IEEE Trans. Nanotechnology

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Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells

Cited by 3 publications

References 8 publications

Strain-Sensitive Current-Voltage Characteristics of ZnSe Nanowire in Metal-Semiconductor-Metal Nanostructure

Strain-Sensitive Current-Voltage Characteristics of ZnSe Nanowire in Metal-Semiconductor-Metal Nanostructure

Investigation of Physically Unclonable Functions Using Flash Memory for Integrated Circuit Authentication

Silicon Nanowire Charge Trapping Memory for Energy-Efficient Neuromorphic Computing

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