Investigation of InGaN-based red/green micro-light-emitting diodes

Zhuang, Zhe; Iida, Daisuke; Ohkawa, Kazuhiro

doi:10.1364/ol.422579

Cited by 58 publications

(33 citation statements)

References 32 publications

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“…It is well known that the blue shift phenomenon in blue and green InGaN-based LEDs grown on c-plane sapphire due to the InGaN QWs is caused by the screening of the piezoelectric field and band filling of the localized state. The same behavior is also exhibited in the InGaN μ-LEDs with high In composition 13 – 18 . Moreover, the wavelength decreases as the chip size is reduced.…”

Section: Resultssupporting

confidence: 72%

Study on the effect of size on InGaN red micro-LEDs

Horng

Chen

et al. 2022

Sci Rep

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In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10 × 10 μm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.

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Section: Resultssupporting

confidence: 72%

Study on the effect of size on InGaN red micro-LEDs

Horng

Chen

et al. 2022

Sci Rep

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“…We also compared the performance of the red μLEDs with other works [9,11,13,35,36]. As shown in Table 1, the red μLEDs in this work realized the highest current density at the emission wavelength around 630 nm.…”

Section: Resultsmentioning

confidence: 71%

“…The curves could be separated into two linear parts with different slopes on the semi-logarithmic scale. The two linear parts of the jIj − V curves in forward bias were the same as that of the μLEDs by mesa etching [13,29]. The turn-on voltage, usually defined as the transition point between the two linear parts, was between 2.0 and 3.0 V for these RGB monochromatic μLEDs.…”

Section: Resultsmentioning

confidence: 99%

“…To solve this problem, special substrates/templates were proposed for high-In-content InGaN growth, such as InGaNOS [9], ScAlMgO 4 (0001) [10], and porous GaN [11]. Our group grows high-In-content InGaN QWs by micro-flow-channel metalorganic vapor-phase epitaxy (MOVPE) [12] on sapphire substrates, and the red μLEDs [13] exhibited good efficiencies compared with other works [9,11]. However, the large blueshift of the peak wavelength for InGaN red μLEDs will make them look yellow or orange at high current densities, which cannot satisfy the requirement of the high dynamic operation range for microdisplays (like seamless AR glasses).…”

Section: Introductionmentioning

confidence: 99%

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Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

2021

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We describe 5 μm squircle InGaN-based red, green, and blue (RGB) monochromatic micro-light-emitting diodes (μLEDs) with an interpitch of 4 μm by pixilation of conductive p-GaN using a H 2 -plasma treatment. The p-GaN was passivated by H 2 plasma and prevented the current's injection into the InGaN quantum wells below. We observed that InGaN-based red μLEDs exhibited a broader full width at half-maximum and larger peak wavelength blueshift at 11.5-115 A∕cm 2 than the green/blue μLEDs. The on-wafer light output power density of the red μLEDs at a wavelength of 632 nm at 115 A∕cm 2 was approximately 936 mW=cm 2 , the highest value reported thus far for InGaN-based red μLEDs. This value was comparable with that of the green/blue μLEDs at 11.5 A∕cm 2 , indicating that the red μLEDs can satisfy the requirement of high brightness levels for specific displays. The color gamut based on InGaN RGB μLEDs covered 83.7% to 75.9% of the Rec. 2020 color space in the CIE 1931 diagram at 11.5 to 115 A∕cm 2 .

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“…In addition, the maximum EQEs are 0.832%, 0.419%, and 0.052% for the red, green, and blue micro-PeLEDs, respectively, while the corresponding maximum current efficiency is 0.28, 1.30 and 0.063 cd A −1 , respectively (Figure S11, Supporting Information). Although the efficiency of blue-or green-emitting micro-PeLED arrays is not yet ideal (Table S2, Supporting Information), [50][51][52][53] red-emitting micro-PeLEDs have a higher EQE than their InGaN-based (0.18%) and AlInGaP-based (up to 0.42%) counterparts. [2,54,55] As shown in Figure S12 (Supporting Information), the device half-lifetime (T 50 ) was 7.8, 2.2, and 0.3 min for red, green, and blue micro-PeLEDs, respectively.…”

Section: Fluorescence Images and Pl Spectra Of Peqd Patternsmentioning

confidence: 99%

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Bai

Xuan

Zhao

et al. 2022

Advanced Optical Materials

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Group III–V semiconductor‐based microscale light‐emitting diode (micro‐LED) displays are recognized as one of the most promising display technologies with superhigh brightness and resolution, strong contrast, and superlarge color gamut but currently suffer from low efficiency, low production yield, and high cost. Here, it is proposed to realize cost‐effective and full‐color micro‐LED displays by using microscale perovskite quantum dot LEDs (micro‐PeLEDs) as emitters. Bright and uniform red‐, green‐, and blue‐emitting (RGB) micro‐PeLED arrays with each pixel size as small as 45 µm are fabricated by in situ inkjet printing a perovskite quantum dot (PeQD) emissive layer in the structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS)/poly(9‐vinylcarbazole) (PVK)/sodium dodecyl sulfate (SDS)/PeQD/1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl)benzene (TPBi)/LiF/Al. These RGB micro‐PeLED arrays display an external quantum efficiency of 0.832%, 0.419%, and 0.052% for red, green, and blue colors, a resolution of 210 PPI, and a wide color gamut (135% of the National Television Standards Committee standard). The authors further demonstrate flexible and full‐color active‐matrix micro‐PeLED displays, which have potential applications in future ultrahigh‐definition displays, light communication, and artificial intelligence.

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Investigation of InGaN-based red/green micro-light-emitting diodes

Cited by 58 publications

References 32 publications

Study on the effect of size on InGaN red micro-LEDs

Study on the effect of size on InGaN red micro-LEDs

Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

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