2018
DOI: 10.1016/j.spmi.2018.10.004
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Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range

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Cited by 27 publications
(8 citation statements)
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“…After Sn doping, the n value of p-Si/n-ITO is increased by around three times and is calculated to be 8.984 and 6.468 for dark and light conditions, respectively. The values of the present work are better than this result [38]. These results suggest that the Cu/Sn-LaPO4/n-Si SBD is favourable for applications in optoelectronic devices.…”
Section: Evaluation Of Cu/sn-lapo4/n-si Mis Structured Diodecontrasting
confidence: 46%
“…After Sn doping, the n value of p-Si/n-ITO is increased by around three times and is calculated to be 8.984 and 6.468 for dark and light conditions, respectively. The values of the present work are better than this result [38]. These results suggest that the Cu/Sn-LaPO4/n-Si SBD is favourable for applications in optoelectronic devices.…”
Section: Evaluation Of Cu/sn-lapo4/n-si Mis Structured Diodecontrasting
confidence: 46%
“…This behavior may be attributed to the absence of free carriers at low temperatures (Chand & Kumar, 1996). It were reported that the resistances of metal/ semiconductor Schottky diodes fabricated with 6H-SiC semiconductor in the traditional sense are in the range of 60-100 Ω at room temperature (Asubay, Genisel, & Ocak, 2014;Çınar, Coşkun, Aydoğan, Asıl, & Gür, 2010;Güzel et al, 2018;Zhang, Madangarli, Tarplee, & Sudarshan, 2001). However, in this study, the resistance of the polymer interface diode at room temperature was calculated as 10.08 kΩ.…”
Section: = +mentioning
confidence: 60%
“…According to Figure 3B, there is a close linear relationship between the ideality factor of the effective barrier height calculated from experimental parameters depending on the temperature. This is related to the lateral inhomogeneity of the barrier height (Güzel, Bilgili, & Özer, 2018;Leroy, Opsomer, Forment, & Van Meirhaeghe, 2005). From the plot, lateral homogeneous barrier height for n = 1 value was calculated as 1.11 eV for 6H-SiC/MEH-PPV polymer interface diode.…”
Section: T(k) Lni-v H(i)-i Dv-d(lni) F(v)-v Nmentioning
confidence: 99%
“…Current-voltage and capacity-voltage measurements have a very important place in determining these experimentally. [12][13][14] Capacity-voltage measurements are one of the basic techniques of admittance spectroscopy. With this technique, the semiconductor plays a vital role in calculating the barrier height from the electronic parameters, the resistance, and the density of the trap levels at the interface, as well as determining the interface state density, which is of great importance in current conduction.…”
Section: Introductionmentioning
confidence: 99%