Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBE

Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular‐beam epitaxy assisted by electron cyclotron resonance plasma

“…Figure 4 shows the bias voltage dependence of carrier concentration at 300 K measured by Hall measurements of InN films grown on Si(111) substrates under two different P In 's. We confirmed by investigating vertical electric current-voltage characteristics between the film and substrate that a 2.5 nm-thick SiN amorphous insulating layer [7] formed on Si during substrate nitridation before growth isolated the electrical properties between them in Hall measurements, although the data were not shown here. Thus, the types of carrier of the InN films were estimated to be all n-type conduction independently of bias voltage and P' In s. At P In = 3.0 × 10 -7 Torr, all carrier concentrations were of the order of 10 20 cm -3 and independent of bias voltage.…”

Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy

“…2(a)is very different from that ofFig. 2(c) because of the impact of the nanofaceting on epitaxial growth[4][5][6][7][8]. The comparison ofFig.…”

“…In spite of this advantage, however, the large lattice and thermal mismatches between these materials remain a critical problem. Several attempts for growth of GaN on a Si(1 1 1) substrate such as wafer patterning to induce lateral growth [1,2] or to confine the growth area [3][4][5] and various kinds of buffer or intermediate layers [3][4][5][6] have yielded improved optical/electrical properties and suggest a possibility of high-quality GaN on a Si substrate. For integration with most Si electronics technology, growth on Si(0 0 1) is much more favorable than on Si(1 1 1).…”

“…For integration with most Si electronics technology, growth on Si(0 0 1) is much more favorable than on Si(1 1 1). However, deposition of GaN on a (0 0 1) plane results in poly-type rough surface morphology which is not suitable for most device fabrication [5][6][7][8]. Some theoretical calculations suggest a relatively small energy difference between hexagonal and cubic phases of GaN compared with other III-nitrides as one of the possible explanations [9,10].…”

Orientation-dependent nucleation of GaN on a nanoscale faceted Si surface

“…r Growth of GaN on a Si substrate offers the exciting potential of integration of GaN devices with mature Si technology. It has been known that GaN dominantly has hexagonal phase on Si(1 1 1), but can be cubic on Si(0 0 1) in epitaxial growth [1][2][3][4][5]. For integration with most Si electronics technology, growth on Si(0 0 1) is much more favorable than on Si(1 1 1).…”