Investigation of low-cost through glass vias formation on borosilicate glass by picosecond laser-induced selective etching

Live single cell imaging assays in glass microwells produced by laser-induced deep etching

“…However, it has been demonstrated that straight side walls can be achieved through optimization for similar processes. 43 Another characteristic is rounded bottom profiles in blind holes. This is similar to what is achieved with conventional wet etching of glass, 30 but in contrast, the U-wells provide a unique combination of the rounded bottom profile with deep, high-aspect ratio wells, which is difficult to achieve with other methods.…”

“…Recent work by others has characterized and optimized methods similar to LIDE for specific TGV wall shapes. 43 TGVs do share design similarities with microwells and glass microfabrication processes for TGVs could potentially be adapted and utilized for biological applications.…”

Development of 3D Wafer Level Hermetic Packaging with Through Glass Vias (TGVs) and Transient Liquid Phase Bonding Technology for RF Filter

“…Here, we show that the picosecond laser affected zone (LAZ) has a higher etching rate while reacting with the hydrofluoric acid (HF) solution compared with the laser unaffected zone. At the LAZ, a series of nanovoids along the path of a laser beam propagating are observed, which contribute to the enhanced etchability of LAZ when the glass sample is immersed in HF solution [ 31 ]. Besides, it is easy to prepare the one-side blind TGVs by controlling the depth of focus and HF solution concentration.…”

“…According to the test method standard: MIL-STD-883 (~6 MPa, method No. 2019.5Die shear strength) [ 29 , 30 , 31 ], this shear force is higher than the standard requirement. Meanwhile, J. Peng et al [ 32 ] suggests that the mechanical reliability of Au-Sn joints during TLP bonding remains stable at 50 MPa at room temperature.…”

Optimization mechanism and applications of ultrafast laser machining towards highly designable 3D micro/nano structuring

“…Picosecond laser etching and femtosecond laser etching employed in a laser generation system are different, but the steps and auxiliary mode are the same. 37,38 In the case of laser etching, due to the Gaussian distribution of the laser beam, the temperature distribution of the irradiated point area is also approximately Gaussian distribution, and the temperature of the center area is much higher than the temperature of the edge, which will cause different reactions of substances in different areas. By choosing an appropriate power to match the temperature threshold of the object, the size of the etched hole is smaller than that of the laser spot, which is the reason for the machining resolutions of laser etching beyond the diffraction limit.…”