Investigation of macroscopic uniformity during CH4/H2 reactive ion etching of InP and its improvement by use of a guard ring

Janiak, K.; Niggebrugge, U.

doi:10.1116/1.1428276

Cited by 5 publications

(4 citation statements)

References 3 publications

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“…Such global flows are described elsewhere. 14,15 If map B, which dominates at higher pattern densities, represents radial flow inward, then perhaps map A, which characterizes lower pattern densities, actually captures an outward radial flow of fluorine neutrals. With low average pattern densities there may be an overall surplus of reactants at the wafer surface.…”

Section: ͓10͔mentioning

confidence: 99%

“…Meanwhile, Jensen et al 14 model etch rate as a quadratic-plus-constant function of radial position, which is shown to fit finite-element simulations of the etching process. Janiak et al 15 study the RIE of InP on 50 mm diam wafers and model the concentration of etchant gas as being proportional to cosh͑r/L͒, where r is the radial distance from the center of the wafer and L is the diffusion length of the reactants. In Janiak's model, as loading increases, L decreases and uniformity deteriorates.…”

mentioning

confidence: 99%

“…Janiak et al 15 introduce the concept of a "guard ring" of exposed substrate at the edge of the wafer, which, by gettering some of the reactants approaching the wafer from the sides of the chamber, counteracts wafer-scale variation during InP etching. Similarly, Jensen et al 14 demonstrate the use of a ring of dummy etching at the edge of the wafer in silicon DRIE.…”

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confidence: 99%

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Characterizing and Predicting Spatial Nonuniformity in the Deep Reactive Ion Etching of Silicon

Taylor

Sun

Hill

et al. 2006

J. Electrochem. Soc.

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We present a way of predicting spatial nonuniformity in deep reactive ion etching ͑DRIE͒. In addition to well-known feature size or aspect-ratio-dependent etch ͑ARDE͒ nonuniformity, etch rate can vary between regions of the wafer, such that supposedly identical microelectromechanical systems ͑MEMS͒ fabricated on that wafer may vary in performance or fail in use. Wafer-and die-scale uniformity may be improved by changing conditions in the etching chamber, but this usually compromises etching speed and may accentuate ARDE. An alternative approach is to lay out the patterns being etched so that they compete for reactants in a controlled way. We demonstrate a way of precharacterizing any DRIE tool plus associated "recipes" of operating parameters. Several test wafers are etched and measured, and simple data-fitting algorithms are run. The model constructed captures etch nonuniformity occurring over the diameter of a wafer plus variations caused by the localization of patterns within the wafer. Our technique models etch rate variation across experimental wafers with fitting errors of between 0.8 and 4.5% root-mean-square per wafer. Our model can then predict etch rate on a 1 mm lateral grid for any etched pattern. We envisage this method being integrated into computer-aided MEMS design systems.

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Section: ͓10͔mentioning

confidence: 99%

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Characterizing and Predicting Spatial Nonuniformity in the Deep Reactive Ion Etching of Silicon

Taylor

Sun

Hill

et al. 2006

J. Electrochem. Soc.

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“…In plasma etching, a field closely related to CVD, the idea of improving the etching rate uniformity by altering the “available for etching” area is not new; there are works which propose or examine the use of dummy patterns to perturb the etching rate in a constructive way, i.e., towards the compensation of the etching rate non‐uniformity. Gottscho et al in a review of uniformity used the term “thieving” to address the use of the dummy patterns.…”

Section: Introductionmentioning

confidence: 99%

Designing Non‐uniform Wafer Micro‐topography for Macroscopic Uniformity in Multi‐scale CVD Processes

Kallikounis

Kokkoris

Cheimarios

et al. 2014

Chemical Vapor Deposition

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The potential of an additional degree of freedom (DOF) in the effort to meet film or deposition rate uniformity along the wafer in CVD processes is investigated. The investigation applies to cases of deposition on a wafer with micro-topography where the common practice is a uniform density of patterns or features (e.g., trenches or holes), with the additional DOF as the feature density along the wafer. A non-uniform density is designed with the objective of improving the uniformity; as a consequence, the differences in the profiles of the deposited films in all the features on the wafer will be compensated. A multiscale modeling framework is utilized for the design. The case study is aluminum metal-organic (MO)CVD from dimethylethylamine alane under conditions of low macroscopic uniformity. Compared to a uniform density of the same number of trenches, the multi-scale computations predict that the designed density of features, namely trenches, induces a remarkable improvement of both the macroscopic uniformity and the number of trenches on the wafer where the uniformity exceeds 0.95. The methodology is applied to features, i.e., the simplest unit cell of topography on a wafer, even if practical implementation of the variation of feature density is difficult. The same methodology can be applied to design the density of a cluster of features comprising a single device, or a die on the wafer.

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A Heat Conduction Structure for the Etching Process of MEMS Devices with Support Anchors

Xing

Chen³

et al. 2022

2022 IEEE Sensors

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Investigation of macroscopic uniformity during CH4/H2 reactive ion etching of InP and its improvement by use of a guard ring

Abstract: Articles you may be interested inSelective etching and polymer deposition on InP surface in reactive ion etching with a mixture of methane and hydrogen J.

Cited by 5 publications

References 3 publications

Characterizing and Predicting Spatial Nonuniformity in the Deep Reactive Ion Etching of Silicon

Characterizing and Predicting Spatial Nonuniformity in the Deep Reactive Ion Etching of Silicon

Designing Non‐uniform Wafer Micro‐topography for Macroscopic Uniformity in Multi‐scale CVD Processes

A Heat Conduction Structure for the Etching Process of MEMS Devices with Support Anchors

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