Investigation of micropipes in 6H–SiC by Raman scattering

Lin, Shenghuang; Chen, Zhiming; Li, Lianbi; Ba, Yintu; Liu, Sujuan; Yang, Mingchao

doi:10.1016/j.physb.2011.12.001

Cited by 11 publications

(7 citation statements)

References 13 publications

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“…22 Figure 4C shows the Raman spectra (100-1800 cm −1 ) of the synthesized SiC at different reaction temperatures. Five peaks 23 around 148 (6H-), 240 (6H-), 767 (6H-), 777 (3C-), and 954 (3C) cm −1 indicate that the newly formed cubic phase SiC was observed at different temperatures. The peaks are becoming sharper and higher with the increasing temperature, revealing a higher crystallinity of the SiC product.…”

Section: Effect Of Smelting Temperaturementioning

confidence: 99%

An efficient way of recycling silicon kerf waste for synthesis of high‐quality SiC

Jiang

Gao

Liu

et al. 2019

Int J Applied Ceramic Tech

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In this paper, an efficient approach of recycling and reutilizing of silicon kerf waste (SKW) to prepare high-quality silicon carbide (SiC) by carbothermic reduction method is reported. SKW used as silicon source and petroleum coke as carbon source were submitted to the induction furnace for high-temperature smelting. The effects and mechanism of smelting temperatures and time on micro morphology, crystal structure, and purity of the obtained high-quality SiC were studied by X-ray diffractometry, scanning electron microscopy (SEM), Fourier transform infrared (FTIR) as well as the Raman and photoluminescence (PL) analyses. Raman and PL analyses have verified the existence of SiC crystal types as 6H and 3C. The SEM and energy dispersive X-ray spectroscopy results show that the SiC particles size increases with the increasing smelting time and demonstrate that the iron impurity was enriched at the edges of SiC which can be easily removed by the subsequent acid leaching. The enrichment process can be accelerated by the increase of temperature. In addition, the carbothermic reduction mechanism of SKW was studied in detail. The obtained SiC powder after purification can reach 98.7% through this new method, which is of low cost, high efficiency, and environment friendly.

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Section: Effect Of Smelting Temperaturementioning

confidence: 99%

An efficient way of recycling silicon kerf waste for synthesis of high‐quality SiC

Jiang

Gao

Liu

et al. 2019

Int J Applied Ceramic Tech

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show abstract

“…Raman spectroscopy has been approved to be an effective and simple tool for the characterization of polytypes, disorder, damages, and impurities properties of SiC [29][30][31]. The Raman scattering efficiency is relative high for SiC because of its strong covalent chemical bond.…”

Section: Raman Spectroscopy Analysis Of Rb-sicmentioning

confidence: 99%

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Zhang

et al. 2017

Int J Adv Manuf Technol

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Surface and subsurface damages appear inevitably in the grinding process, which will influence the performance and lifetime of the machined components. In this paper, ultraprecision grinding experiments were performed on reactionbonded silicon carbide (RB-SiC) ceramics to investigate surface and subsurface damages characteristics and formation mechanisms in atomic scale. The surface and subsurface damages were measured by a combination of scanning electron microscopy (SEM), atomic force microscopy (AFM), raman spectroscopy, and transmission electron microscope (TEM) techniques. Ductile-regime removal mode is achieved below critical cutting depth, exhibiting with obvious plow stripes and pile-up. The brittle fracture behavior is noticeably influenced by the microstructures of RB-SiC such as impurities, phase boundary, and grain boundary. It was found that subsurface damages in plastic zone mainly consist of stacking faults (SFs), twins, and limited dislocations. No amorphous structure can be observed in both 6H-SiC and Si particles in RB-SiC ceramics. Additionally, with the aid of high-resolution TEM analysis, SFs and twins were found within the 6H-SiC closed packed plane, i.e., (0001). At last, based on the SiC structure characteristic, the formation mechanisms of SFs and twins were discussed, and a schematic model was proposed to clarify the relationship between plastic deformation-induced defects and brittle fractures.

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“…Now, Raman spectroscopy has been applied to SiC material for characterizations of polytypes [6][7][8] , stacking faults 9 , stress 10 and doping 7,11,12 . In addition, it also has been employed to SiC crystals for investigating the properties in the vicinity and in the center of micropipes 13 . Especially, the Raman scattering on N-doped SiC has been reported in many papers 7,[14][15][16][17] .…”

Section: Introductionmentioning

confidence: 99%

Effect of impurities on the Raman scattering of 6H-SiC crystals

Lin

Chen

et al. 2012

Mat. Res.

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Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al-and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.

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Investigation of micropipes in 6H–SiC by Raman scattering

Cited by 11 publications

References 13 publications

An efficient way of recycling silicon kerf waste for synthesis of high‐quality SiC

An efficient way of recycling silicon kerf waste for synthesis of high‐quality SiC

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Effect of impurities on the Raman scattering of 6H-SiC crystals

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