The electrodeposition of cobalt in the porous silicon (PSi) substrate was investigated in terms of the deposition times and current densities. The PSi/Co samples were characterized by SEM, XRD, Raman, and photoluminescence (PL) spectroscopies. The results indicated that for all current densities, the PL intensities of PSi/Co samples with shorter deposition times (t s ≤ 20 min) increased due to spherical Co nanoparticles (NPs) could be created the new recombination centers, compared to that of the undeposited PSi. On the other hand, the PL intensity of PSi/Co samples significantly decreased at longer deposition times (t l > 20 min) because of larger Co NP cluster promoted the formation of non-radiative centers. The increased PL intensities in samples with t s were attributed to both the quantum confinement effect and surface effects. PL analyses also suggested that after exposure to air for 60 days, PL characteristics of PSi/Co were stabilized depending on deposition time and current density. how structural, morphological and PL properties of PSi/Co nanostructures vary with the Co nanoparticles deposited via the