Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures

Liu, Q.Z.; Yu, L. S.; Lau, S. S.; Zappe, Hans; Epler, J. E.

doi:10.1109/68.502101

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Compound Semiconductors1

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1997

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Cited by 8 publications

(2 citation statements)

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“…Mode sizes are smaller than in Si, the near-field usually being strongly elliptical. Although carrier depletion [32] or photoelastic waveguides [33], as well as deposited dielectric layer waveguides, have been demonstrated in GaAs, their use is relatively infrequent.…”

Section: Compound Semiconductorsmentioning

confidence: 99%

Semiconductor Optical Sensors

Zappe

1999

Sensors Update

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Section: Compound Semiconductorsmentioning

confidence: 99%

Semiconductor Optical Sensors

Zappe

1999

Sensors Update

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“…In particular, this method is often used for fabrication of low-loss optical waveguides. The substrate materials include fused quartz systems [6], semiconductor types [7,8], and ferroelectric substrates such as LiNbO 3 , LiTaO 3 , BaTiO 3 , and Sr 0.6 Ba 0.4 Nb 2 O 6 [9,10].…”

Section: Introductionmentioning

confidence: 99%

Stress-analysis method for optical waveguides composed of elastically anisotropic materials and its application to strain-induced optical waveguides

Saitoh

Koshiba

Tsuji

1998

Electron. Comm. Jpn. Pt. II

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In this paper we propose a new stress analysis method that can evaluate the residual thermal stress distribution in an optical waveguide with an elastically arbitrary anisotropy. We analyze the optical waveguide by taking into account the refractive index change obtained from stress analysis. A rigorous evaluation of the propagation characteristics in a strain‐induced optical waveguide is now possible. Since the finite‐element method is used for both the stress analysis and the optical waveguide analysis, the complex refractive index change obtained from stress analysis can be faithfully reflected in the optical waveguide analysis. Strain‐induced optical waveguides with a SiO2/GaAs structure and a SiO2/LiNbO3 structure are chosen. The stress and strain in the waveguide and the change of the refractive index profile are obtained numerically and their effects on the transmission characteristics of the optical wave are studied. To the best of our knowledge, this is the first time that an optical waveguide analysis has been carried out from stress analysis taking into account an anisotropy. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(5): 16–23, 1998

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Characteristics of photoelastic waveguidesin SiGe/Si heterostructures

Lea

Weiss

1997

Electron. Lett.

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Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures

Cited by 8 publications

References 12 publications

Semiconductor Optical Sensors

Semiconductor Optical Sensors

Stress-analysis method for optical waveguides composed of elastically anisotropic materials and its application to strain-induced optical waveguides

Characteristics of photoelastic waveguidesin SiGe/Si heterostructures

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