Investigation of Precipitation in Czochralski Silicon by Phonon Spectroscopy

Schrag, G.; Rebmann, M.; Wurster, C.; Zeller, Fabian; Laßmann, Kurt; Eisenmenger, Wolfgang

doi:10.1002/(sici)1521-396x(199807)168:1<37::aid-pssa37>3.0.co;2-q

Cited by 3 publications

(2 citation statements)

References 27 publications

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“…7), and thus to a decrease of ℓ film(HC) given the relatively small thickness of the film, unless the oxygen in the film somehow acts as a much stronger scattering center. Phonon scattering in oxygen-doped silicon has been found to depend on heat treatment [26,27] at frequencies in excess of ∼ 300 GHz. But, phonons in this frequency range carry heat predominantly above 3 K, and no evidence exists for phonon scattering by oxygen at lower frequencies (corresponds to T < 1 K).…”

Section: A Silicon Filmsmentioning

confidence: 99%

Phonon scattering and internal friction in dielectric and metallic films at low temperatures

Liu

Pohl

2001

Phys. Rev. B

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We have measured the heat conduction between 0.05 K and 1.0 K of high purity silicon wafers carrying on their polished faces thin dielectric films of e-beam amorphous Si, molecular beam epitaxial (MBE) Si, e-beam polycrystalline CaF2, and MBE CaF2, and polycrystalline thin metallic films of e-beam Al, sputtered alloy Al 5056, e-beam Ti, and e-beam Cu. Using a Monte Carlo simulation to analyze the conduction measurements, we have determined the phonon mean free path within the films, and found all of them to be much shorter even than in typical bulk amorphous solids, with no exceptions. We have also measured the internal friction of these films below 10 K and found, however, their internal friction at low temperatures strikingly close to that of amorphous solids, both in magnitude and in their temperature independence, with the exception of the MBE Si and alloy Al 5056, whose internal friction is even much smaller than that of amorphous solids. The internal friction results indicate the phonon scattering in these thin films is the same as, or even much less stronger than, in other amorphous solids, according to the Tunneling Model. Thus, we conclude that the heat conduction measurements do not support the picture that the lattice vibrations of these films are glasslike, as had been surmised earlier for thin metallic films, on the basis of low temperature internal friction measurements alone [Phys. Rev. B 59, 11767 (1999)]. At the least, the films must contain additional scattering centers which lead to the very small phonon mean free path. Most remarkably, the MBE Si shows the same strong scattering of thermal phonons as do the other films, while having the negligible internal friction expected for a perfect film. The disorder causing the strong scattering of the thermal phonons in this film is completely unknown. The non-glasslike phonon scattering phenomena observed here in thin dielectric and metallic films deserve further investigations.

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Section: A Silicon Filmsmentioning

confidence: 99%

Phonon scattering and internal friction in dielectric and metallic films at low temperatures

Liu

Pohl

2001

Phys. Rev. B

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“…The associated parameters are listed in Table II. Ϫ1.019130 b 3 5.200000 c 3 0.984307 a 4 1.048130 b 4 5.848000 c 4 1.005118 a 5 0.281000 b 5 5.000000 c 5 0.848000 a 6 0.070814 b 6 7.000000 c 6 1.445000 …”

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confidence: 99%

Modified neglect of diatomic overlap parametrization of oxygen: A cluster study of oxygen defects in silicon

Ballo¹,

Harmatha²

2003

Phys. Rev. B

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We present a parametrization of oxygen within the framework of the modified neglect of diatomic overlap ͑MNDO͒ technique. The atomic structure and formation energy of a oxygen defect in silicon are studied as a test of the reparametrized MNDO technique. We find that the geometry and the associated formation energy are in good agreement with experiment as well as with results of ab initio calculations. Even the calculations based on the MNDO technique are by 2 or 3 orders of magnitude less expensive than ab initio calculations.

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