Investigation of quantum oscillations in ZnO/CdO heterostructure

Abstract

We report on the observation of the Shubnikov–de Haas oscillation in a polycrystalline ZnO/CdO heterostructure grown on a silicon substrate by a spray pyrolysis technique in temperatures below 6 K. From the analysis of these quantum oscillations, we obtained the cyclotronic effective mass, the 2D carrier concentration, and the thickness of the two-dimensional electron gas in the interface of the two layers. The results suggest that a two-dimensional electron gas is successfully obtained at the ZnO/CdO interface.

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

“…Considering the superior electrical properties of CdO and the widespread use and low cost of silicon, it is very important to work as an n-CdO/p-Si heterojunction photodetector. Although there are various studies based on CdO heterojunctions in the literature [24,25], studies on heterojunction photodetectors between CdO and Si are quite limited. Caglar and Yakuphanoglu fabricated a CdO-based diode and performed electrical characterization over a wide temperature range [26].…”