Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Abstract

In the present study, rubrene-based Schottky barrier structures have been formed by using the evaporation technique to investigate the conductance–voltage (G–V) and capacitance-voltage (C–V) values of the effect of the 60Co gamma-ray irradiation. The conductance and capacitance values were measured before and after 60Co gamma-ray radiation at 100 kHz, 500 kHz and 1 MHz. The frequency-dependent effects of interface state density and series resistance with and without irradiation in dark were analyzed at room temperature. The analysis results imply that values of forward and reverse C characteristics decrease the rate depending on gamma-ray irradiation and the increment of voltage due to the exchange of majority carriers between the majority carrier band of semiconductor and interface states. The irradiation dose and frequency increase show irradiation dispersion at the accumulation region when an A.C. signal is applied to the semiconductor structures. The G–V characteristics of rubrene-based Schottky barrier structures change with gamma radiation dose at different frequencies. Also, these characteristics relate to the density of the interface states. The analyses reveal that D it values decrease with the increase in frequency before 60Co gamma-ray irradiation. These values also decrease with the increase in frequency at the same radiation doses after 60Co gamma-ray irradiation. They decrease with the increase in irradiation doses at the same frequency, except for 100 kHz. Experimental results indicate that rubrene-based Schottky barrier structures can be altered using 60Co gamma-ray irradiation. The experimental contributions indicate a substantial step forward in the structure-function relationship in the benchmark organic semiconductors.

Structural role of double layer amphoteric oxides forms on electrical conductivity: PbO/zinc oxide semiconductor

“…Table 1 shows theR , s F , b and n values for then type PbO/Zinc Oxide double layer device. Several studies on diodes and metal-insulator-semiconductor (MIS) structures reported that they had large diode ideality factors such as n=2, » n 2.2, n=3, n=4-6.9, n=3.91±0.11, n=5.47±0.69, n=11.5, n<5.5 [49][50][51][52][53][54][55]. The ideality factor of the studied structures was found to be bigger or smaller (only n=11) than the ideality factors reported by the mentioned references.…”

“…Moreover, the values reveal that the current flow mechanism across the interface also depends on the generation-recombination, and leakage currents. The parameter n might have higher values due to several reasons such as the presence of a thin native interfacial layer, the bias voltage dependence of Schottky barrier height, and the wide distribution of low-Schottky barrier height patches (or barriers in the homogeneities) [53][54][55]. In the forward-bias ln (I)-V plots, there are linear regions between the voltages of 0.1 V and 0.8 V, then, it deviates considerably particularly because of the effects of thePbO/Zincoxide double-layer and the series resistance R s .…”

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

“…Many fixed hole traps are also available. It was seen that there were considerable changes in the electrical properties of Schottky-based structure for radiation doses higher than one kGy [40][41][42][43][44][45][46][47]. Owing to the impact of radiation at the insulator layer/semiconductor interface, a large quantity of e-h pairs were produced.…”