Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-$k$ MOSFETs

Lee, Ju-Wan; Lee, Byoung Hun; Shin, Hyungcheol; Lee, Jong-Ho

doi:10.1109/ted.2010.2041871

Cited by 22 publications

(12 citation statements)

References 15 publications

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“…Therefore, it is difficult to separate the junction leakage from the MOSFET off-current and the gate-induced drain leakage (GIDL). The physical mechanism of the VJL is typically described as a trap-assisted tunneling (TAT) or a meta-stable atomic configuration of a trap causing the Shockley-Read-Hall (SRH) recombination process [35][36][37][38][39][40][41].…”

Section: Different Rtn Types and Sourcesmentioning

confidence: 99%

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Chao

Yeh

et al. 2019

Sensors

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In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.

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Section: Different Rtn Types and Sourcesmentioning

confidence: 99%

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Chao

Yeh

et al. 2019

Sensors

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“…This challenge leads many researchers to the considerable research on the properties of the high-k dielectric. Some approaches in analyzing the traps in the high-k dielectric are the low-frequency noise [1], [2] and random telegraph noise (RTN) measurements [3]- [8]. In particular, the RTN which is attributed to the random trapping/detrapping process of carriers in the oxide traps is introduced as an effective way for analyzing single or multiple slow oxide traps in the gate dielectrics.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the RTN which is attributed to the random trapping/detrapping process of carriers in the oxide traps is introduced as an effective way for analyzing single or multiple slow oxide traps in the gate dielectrics. Therefore, the RTN has been widely studied in several currents, such as drain current (I d ) [3], [4], gate leakage current (I g ) [5]- [7], gate-induced drain leakage (GIDL) current [8], and gate edge direct tunneling (EDT) current [8].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

Cho

Son

et al. 2011

IEEE Electron Device Lett.

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Plasma damage on a high-k/SiO 2 dielectric at a gate edge during a dry etch process is investigated. The damage was observed to generate slow oxide traps, causing a random telegraph noise (RTN) in a gate edge direct tunneling current. Through the analysis of the RTN, the distribution of the oxide traps in the high-k/SiO 2 dielectric was obtained, and the plasma-damageinduced oxide traps were found to be distributed over a wide area of the high-k/SiO 2 sidewall at the gate edge region.Index Terms-Gate edge direct tunneling (EDT) current, oxide trap, plasma damage, random telegraph noise (RTN).

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“…The RTN in the gate edge current as well as GIDL current were investigated under GIDL bias condition in high-k nMOSFETs. 14 However, almost all the I G is the gate edge current from the drain overlap region due to the negatively low gate bias ͑V G = −0.3 V͒ and high drain voltage ͑V D = 1.5 V͒. As the V G increases negatively, the tunneling current from the body and the gate edge current from the source overlap region are not negligible.…”

mentioning

confidence: 99%

Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

Lee

Park

Shin

et al. 2011

Applied Physics Letters

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Articles you may be interested inHole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric Appl. Phys. Lett. 102, 073507 (2013); 10.1063/1.4791676 Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 100, 033501 (2012); 10.1063/1.3678023 Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxidesemiconductor field effect transistors and its reliability implications J. Appl. Phys. 111, 024101 (2012); 10.1063/1.3676255Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 99, 012106 (2011);

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Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-$k$ MOSFETs

Cited by 22 publications

References 15 publications

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

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