Investigation of residual stress in structured diamond films grown on silicon

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

“…This is fully consistent with the fact that the TEC of Si becomes higher than that of diamond at T N 510°C (see Fig. 2) [44]. Fig.…”

“…6b) than for the thicker diamond film GaN/D2 (~0.3 GPa). This effect is related to the elasticity of diamond which partially compensates the stress at the upper corner of the diamond strip [44]. In order to deeper analysis of the influence of the film thickness on the thermally induced stress, additional FEM simulations were performed (see Fig.…”

“…2, [41][42][43]). The simulated biaxial stress distribution is rather homogeneous and starts to change several μm from the strip edge [44]. For comparison FEM simulation with experimental data, the values for the center and edge of the diamond strips were averaged over the strip thickness and the width corresponding to area excited by laser during the Raman measurements (i.e.…”

“…5 μm). More information of used approximations and material data can be found in our previous study [44].…”

Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

“…The stress appears in CVD process when the samples are cooled down from the deposition temperature to the room temperature. The magnitude of induced stress is affected by deposition conditions and diamond film properties (morphology, thickness) but depends mainly on the mismatch of the thermal and mechanical properties between substrate and diamond film [25,26].…”