Investigation of resistive switching behavior of Ag/SnO_x/ITO device

Abstract

SnO x thin film was deposited by reactive magnetron sputtering and the resistance switching behavior of Ag∕SnO x ∕ITO was investigated. The endurance testing indicates that HRS resistance decreases with an increase in the number of cycles. After annealing, the memory performance is enhanced, and the ratio of the device resistance of HRS and LRS increases greatly. The abnormal transformation sequence from HRS to LRS was observed for the annealed device and can be explained by electron trapping and detrapping based on the analysis of x-ray diffraction and the Raman spectrum. The temperature-dependent I − V measurement indicates that the thermal activation process is responsible for the temperature range of 300 to 200 K; however, the carrier transport can be ascribed to the nearest-neighbor hopping conduction mechanism for the temperature range of 200 to 100 K. The general conduction mechanism of Ag∕SnO x ∕ITO device can be elucidated by the trap-controlled space charge limited conduction model, and the conductive schematic in the SET and RESET processes has been given. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms J. Micro/Nanolith. MEMS MOEMS 024501-2 Apr-Jun 2015 • Vol. 14(2) Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms

Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application

“…Unlike conventional SnO X , which demands an annealing process to achieve resistive switching (RS) characteristics, the as-deposited SnO X used in this paper showed RS characteristics. As-deposited SnO X by direct current (DC) reactive magnetron sputtering has already been verified the RS in a Ag/SnO X /ITO device by Da chen and Shi-Hua Huang, and it showed a low resistance of less than 3 kΩ and a resistance window of less than ~10 [ 13 , 14 ]. In addition, Jidong Jin et al reported that the DC-sputtered SnO X showed poor RS on the stack of an Al/SnO X /Pt device [ 15 ].…”

Threshold resistance switching in silicon-rich SiO x thin films

“…The difference between the two kinds of RS effects is whether they have two stable resistance states without external applied bias. [3][4][5][6][7] Furthermore, investigating the RS mechanism of different RS methods is significant to clarify the RS behaviors.…”

Compliance-free, analog RRAM devices based on SnOx

“…Yun et al (Ag/SnO 2 /Pt) reported that microwave treatment influences the diameter of the filament, which in turn increases the formation and rupture times of the filament for improved stability. Chen et al investigated RS behaviour for Ag/SnO x /ITO structure to observe the impact of annealing on the ratio of the resistances states, as it affects the memory performance 34 , 35 . However, SnO x based RRAM devices operating compliance-free and exhibiting stable multistate operation are very scarcely reported.…”