Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films

Shinde, S.S.; Shinde, Pravin S.; Oh, Youngwoo; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

doi:10.1016/j.jaap.2012.06.007

Cited by 27 publications

(11 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus the balance between these two defects determines the nature of conductivity in ZnO thin films. The peak centred near 190eV indicates the presence of B -N bonds 26 . This peak is not seen in the monodoped film's XPS.…”

Section: X-ray Photoelectron Spectra (Xps) Analysismentioning

confidence: 99%

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Narayanan

Deepak

2017

Mat. Res.

View full text Add to dashboard Cite

The success of codoping by donor-acceptor impurities in accomplishing p type ZnO thin films deposited by spray pyrolysis technique is reported here. Monodoping ZnO with N altered the conductivity type but the resistivity is too high making it practically impossible to be useful in optoelectronic applications. B-N codoping increased the carrier concentration and obtained comparatively low resistivity because codoping enhanced the acceptor incorporation by forming acceptor-donor-acceptor complex in the band gap. XRD analysis revealed the dependence of dopant incorporation on the texture and microstructure of the films. XPS analysis confirmed the enhancement of N incorporation with codoping. Energy gap value increased for codoped films due to the Burstein-Moss effect, arising from the increase in carrier concentration. Hence the present work envisages the preparation of transparent p type ZnO thin films suitable for tandem thin film solar cells and also for other optoelectronic applications.

show abstract

Section: X-ray Photoelectron Spectra (Xps) Analysismentioning

confidence: 99%

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Narayanan

Deepak

2017

Mat. Res.

View full text Add to dashboard Cite

show abstract

“…The deconvoluted major peak at BE 398.6 and a minor peak at 399.1 eV are connected to

{NH}_{4}^{+}

ions and NH 3 molecules indicating N 1s states accordingly . The oxidation states of phosphorus are indicated in Figure d, which shows that 2p states of phosphorus at BEs 132.4 and 139.1 eV are characteristic peaks of P2p 3/2 and P2p 1/2 states . The peaks at 529.8 and 531.5 eV in Figure e correspond to the O 1s states of O 2− ions with Zn 2+ ions whereas the peak at 530.8 eV corresponds to the O − ions with

{NH}_{4}^{+}

ions …”

Section: Resultsmentioning

confidence: 96%

Microwave Synthesis of Zinc Ammonium Phosphate/Reduced Graphene Oxide Hybrid Composite for High Energy Density Supercapacitors

Raja

Vickraman

Simon

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, zinc ammonium phosphate (ZAP) is interluded with reduced graphene oxide (rGO) as a composite (ZAPG2) via microwave synthesis route. The ZAPG2 is investigated by X‐ray diffraction (XRD), Raman, scanning electron microscopy (SEM), X‐ray photoelectron spectroscopy (XPS), and electrochemical studies (cyclic voltammetry, galvanostatic charge discharge, and impedance). The Raman analysis confirms the graphitization of rGO in the ZAP, and XPS confirms the elemental composition. The SEM morphology reveals that rGO spreads over the micropyramidal envelope of ZAP. The ZAPG2//rGO device delivers a higher specific capacitance of 356 F g−1 for 5 m than in 3 m H2SO4 (133.7 F g−1) electrolyte at a current density of 1 A g−1 within the potential window of 1.8 V. The cyclic stability of 86.1% for 3 m and 66.6% for 5 m are noted for 5000 charge–discharge cycles. ZAPG2//rGO combination is the first attempt at facilitating better specific capacitances on device performance. This parallels in energy density, as 59.9 W h kg−1 in 3 m and 153.4 W h kg−1 in 5 m driving for the same power density of 448.3 W kg−1 at 1 A g−1, which suggests the hybrid composite device's practicality for high‐energy supercapacitor applications.

show abstract

“…2 0 ± 0.010 1 × 10 15 3.56 ± 0.015 5 × 10 15 3.74 ± 0.016 1 × 10 16 2.72 ± 0.022 5 × 10 16 2.66 ± 0.020 1 × 10 17 2.48 ± 0.024 are also observed in the case of Al-and Fe-doped ZnO films by Sharma et al (28) and Kumar et al (29), respectively. Room temperature PL studies are performed to determine the optical differences and origin of emission modes in the luminescence spectra of N 5+ -implanted ZnO films; the spectra are shown in Figure 7.…”

Section: Optical Propertiesmentioning

confidence: 99%

Impact of N⁵⁺ion implantation on optical and electrical properties of polycrystalline ZnO film

Kumar

Keshri

Pandey

et al. 2014

Radiation Effects and Defects in Solids

View full text Add to dashboard Cite

A combined study on structural, vibrational, optical and carrier conductivity behaviours has been carried out on ZnO films implanted with 45 keV N 5+ ions with a fluence of 1 × 10 15 − 1 × 10 17 cm −2 . The paper provides an interesting result that the sample implanted with the highest fluence of 1 × 10 17 cm −2 shows p-type conductivity at room temperature with a reasonably high carrier concentration of 8.36 × 10 20 cm −3 . All implanted samples show negative magnetoresistance and its value increases with the increase in the magnetic field as well as fluence. The maximum negative MR value at 5 K, obtained by the application of 8 T magnetic field, has been found to be − 11.8% for the film with the highest fluence of 1 × 10 17 cm −2 .

show abstract

Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films

Cited by 27 publications

References 32 publications

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Microwave Synthesis of Zinc Ammonium Phosphate/Reduced Graphene Oxide Hybrid Composite for High Energy Density Supercapacitors

Impact of N⁵⁺ion implantation on optical and electrical properties of polycrystalline ZnO film

Contact Info

Product

Resources

About

Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films

Cited by 27 publications

References 32 publications

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Microwave Synthesis of Zinc Ammonium Phosphate/Reduced Graphene Oxide Hybrid Composite for High Energy Density Supercapacitors

Impact of N5+ion implantation on optical and electrical properties of polycrystalline ZnO film

Contact Info

Product

Resources

About

Impact of N⁵⁺ion implantation on optical and electrical properties of polycrystalline ZnO film