2007
DOI: 10.1002/pssc.200674917
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Investigation of surface morphology of n‐type GaN after photoelectrochemical reaction in various solutions for H2 gas generation

Abstract: Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution.

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Cited by 16 publications
(16 citation statements)
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“…Anodic oxidation of GaN working electrode is, however, one of problems for stable hydrogen evolution. The model was proposed to be oxidation and dissolution of the Ga into an electrolyte [5]. The oversaturated Ga formed Ga oxides on the GaN surface especially in neutral electrolytes.…”
mentioning
confidence: 99%
“…Anodic oxidation of GaN working electrode is, however, one of problems for stable hydrogen evolution. The model was proposed to be oxidation and dissolution of the Ga into an electrolyte [5]. The oversaturated Ga formed Ga oxides on the GaN surface especially in neutral electrolytes.…”
mentioning
confidence: 99%
“…Comparing from the previous results [4], the average etching depths were small for these experiments. Thus, the photocurrent would mainly used for water splitting and not for GaN surface etching from this consideration.…”
Section: Contributed Articlementioning
confidence: 53%
“…The surfaces with the other treatments hardly changed chemically. Thus, the mechanisms of the surface roughened and chemically changed after the treatments are thought to be different [4].…”
Section: Contributed Articlementioning
confidence: 99%
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