The surface changes of n‐type GaN during photoelectrochemical treatment were investigated by not only electrochemical measurement but also photoluminescence (PL). The electrolytes used were H2SO4, Na2SO4, and NaOH with and without C2H5OH in order to clarify the reaction difference. The intensity oscillations of deep PL peaks decreased with increasing surface roughness. The D0X peak shift with strain release by the surface roughened were also observed. The surface treated using Na2SO4 with/without C2H5OH were oxidized and caused new PL peaks related to the surface defects. All of the surfaces treated with C2H5OH were observed much less change. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)